BTS 452 R
Smart Power High-Side-Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown with restart
•
Overvoltage protection
(including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
with external resistor
•
Open drain diagnostic output for overtemperature
and short circuit
•
Open load detection in OFF - State
with external resistor
•
CMOS compatible input
•
Loss of GND and loss of
V
bb
protection
•
ESD - Protection
•
Very low standby current
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Nominal load current
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
62
200
1.8
V
mΩ
A
6...52 V
P-TO252-5-11
Application
•
All types of resistive, inductive and capacitive loads
•
µC compatible power switch for 12 V, 24 V and 42 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
Page 1
2004-01-27
BTS 452 R
Block Diagram
+ V bb
Voltage
source
V
Logic
Overvoltage
protection
Current
limit
Gate
protection
OUT
Charge pump
Level shifter
Rectifier
IN
Limit for
unclamped
ind. loads
Temperature
sensor
Load
ESD
ST
Logic
GND
miniPROFET
Signal GND
Load GND
Pin
1
2
3
4
5
TAB
Symbol
GND
IN
Vbb
ST
OUT
Vbb
Function
Logic ground
Input, activates the power switch in case of logic high signal
Positive power supply voltage
Diagnostic feedback
Output to the load
Positive power supply voltage
Pin configuration
Top view
Tab = V
BB
1
2
(3)
4
5
GND IN
ST OUT
Page 2
2004-01-27
BTS 452 R
Maximum Ratings
at
T
j
= 25°C, unless otherwise specified
Parameter
Supply voltage
Supply voltage for full short circuit protection
Continuous input voltage
Load current (Short - circuit current, see page 5)
Current through input pin (DC)
Operating temperature
Storage temperature
Power dissipation
1)
Inductive load switch-off energy dissipation
1)2)
single pulse, (see page 9)
Tj =150 °C,
I
L
= 1 A
Load dump protection
2)
V
LoadDump3)
=
V
A
+
V
S
R
I
=2Ω,
t
d
=400ms,
V
IN
= low or high,
V
A
=13,5V
R
L
= 13.5
Ω
R
L
= 27
Ω
Electrostatic discharge
voltage
(Human Body Model)
V
ESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
Thermal Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
R
thJC
R
th(JA)
R
th(JA)
-
-
-
-
80
45
3
-
60
K/W
K/W
±
1
±
5
73.5
88.5
kV
V
Loaddump
V
Symbol
V
bb
V
bb(SC)
V
IN
I
L
I
IN
T
j
T
stg
P
tot
E
AS
Value
52
50
-10 ... +16
self limited
±
5
-40 ...+150
-55 ... +150
41.6
150
W
mJ
A
mA
°C
Unit
V
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2not subject to production test, specified by design
3
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than
V
bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
Page 3
2004-01-27
BTS 452 R
Electrical Characteristics
Parameter and Conditions
at
T
j
= -40...+150°C,
V
bb
= 12..42V,
unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance
T
j
= 25 °C,
I
L
= 1 A,
V
bb
= 9...52 V
T
j
= 150 °C
Nominal load current; Device on PCB
1)
T
C
= 85 °C,
V
ON
= 0.5 V
Turn-on time
R
L
= 47
Ω
Turn-off time
R
L
= 47
Ω
Slew rate on
Slew rate off
10 to 30% V
OUT
,
70 to 40% V
OUT
,
dV/dt
on
-dV/dt
off
-
-
0.7
0.9
2
2
V/µs
R
L
= 47
Ω,
V
bb
= 13.5 V
R
L
= 47
Ω,
V
bb
= 13.5 V
Operating Parameters
Operating voltage
Undervoltage shutdown of charge pump
T
j
= -40...+85 °C
T
j
= 150 °C
Undervoltage restart of charge pump
Standby current
T
j
= -40...+85 °C,
V
IN
= low
T
j
= +150 °C
2)
,
V
IN
= low
Leakage output current (included in
I
bb(off)
)
V
IN
= low
Operating current
V
IN
= high
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2higher current due temperature sensor
Symbol
min.
R
ON
-
-
I
L(ISO)
t
on
t
off
1.8
-
-
Values
typ.
max.
Unit
mΩ
150
270
2.2
80
80
200
380
-
180
200
A
µs
to 90%
V
OUT
to 10%
V
OUT
V
bb(on)
V
bb(under)
6
-
-
-
-
-
4
-
-
-
0.8
52
4
5.5
5.5
V
V
bb(u cp)
I
bb(off)
-
-
-
µA
15
18
5
2
mA
I
L(off)
I
GND
-
-
Page 4
2004-01-27
BTS 452 R
Electrical Characteristics
Parameter and Conditions
at
T
j
= -40...+150°C,
V
bb
= 12..42V,
unless otherwise specified
Protection Functions
1)
Initial peak short circuit current limit (pin 3 to 5)
T
j
= -40 °C,
V
bb
= 20 V,
t
m
= 150 µs
T
j
= 25 °C
T
j
= 150 °C
T
j
= -40...+150 °C,
V
bb
> 40 V , ( see page 12 )
Repetitive short circuit current limit
T
j
= T
jt
(see timing diagrams)
V
bb
< 40V
V
bb
> 40V
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
,
I
bb
= 4 mA
Overvoltage protection
3)
I
bb
= 4 mA
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery
Reverse battery
4)
Drain-source diode voltage (V
OUT
>
V
bb
)
T
j
= 150 °C
-V
bb
-V
ON
-
-
-
600
52
-
V
mV
T
jt
∆T
jt
150
-
-
10
-
-
°C
K
V
bb(AZ)
62
-
-
V
ON(CL)
I
L(SCr)
-
-
59
6
4.5
63
-
-
-
V
I
L(SCp)
-
-
4
-
-
6.5
-
5
2)
9
-
-
-
A
Symbol
min.
Values
typ.
max.
Unit
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
.
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 8
4Requires a 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
Page 5
2004-01-27
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