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Q67060-S6700-A4

Description
Smart Lowside Power Switch
File Size189KB,11 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

Q67060-S6700-A4 Overview

Smart Lowside Power Switch

HITFET
®
BTS 917
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(lim)
I
D(ISO)
E
AS
60
1.5
3.5
V
A
A
100 mΩ
1000 mJ
limitation
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
®
chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
NC
Drain
dv/dt
limitation
Current
limitation
Overvoltage
protection
M
2
3
1
IN
4
CC
Over-
temperature
protection
ESD
R
CC
Overload
protection
Short circuit
Short circuit
protection
protection
Source
5
HITFET
®
Semiconductor Group
Page 1
14.07.1998

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