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Q67060-S6111-A4

Description
9.8 A BUF OR INV BASED PRPHL DRVR, PZFM5
Categorysemiconductor    Analog mixed-signal IC   
File Size258KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

Q67060-S6111-A4 Overview

9.8 A BUF OR INV BASED PRPHL DRVR, PZFM5

Q67060-S6111-A4 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals5
Maximum supply voltage 141 V
Minimum supply voltage 14.75 V
Rated supply voltage 112 V
On time200 us
Off time250 us
Processing package descriptionTO-220, 5 PIN
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationZIG-ZAG
Packaging MaterialsPLASTIC/EPOXY
Interface TypeBUF OR INV BASED PRPHL DRVR
Built-in protectionOVER CURRENT; OVER VOLTAGE; THERMAL
Output current flow directionSOURCE
Rated output peak current limit9.8 A
BTS436L2
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
R
ON
V
bb(on)
I
L(NOM)
I
L(SCr)
38mΩ
4.75...41V
9.8A
40A
Package
TO 220-5-11
TO-263-5-2
TO-220-5-12
Standard
SMD
Straight
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
Applications
µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of V
bb
protection
Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN
ST
Logic
with
protection
functions
OUT
Load
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in ON-state
Feedback of thermal shutdown in ON-state
PROFET
GND
Semiconductor Group
Page 1
of 12
2003-Oct-01

Q67060-S6111-A4 Related Products

Q67060-S6111-A4 BTS436L2 Q67060-S6111-A3 Q67060-S6111-A2 BTS436L2S
Description 9.8 A BUF OR INV BASED PRPHL DRVR, PZFM5 9.8 A BUF OR INV BASED PRPHL DRVR, PZFM5 9.8 A BUF OR INV BASED PRPHL DRVR, PZFM5 9.8 A BUF OR INV BASED PRPHL DRVR, PZFM5 9.8 A BUF OR INV BASED PRPHL DRVR, PSFM5
Number of functions 1 1 1 1 1
Number of terminals 5 5 4 5 5
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location ZIG-ZAG ZIG-ZAG SINGLE ZIG-ZAG SINGLE
Built-in protection OVER CURRENT; OVER VOLTAGE; THERMAL TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL OVER CURRENT; OVER VOLTAGE; THERMAL TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Output current flow direction SOURCE SOURCE SINK SOURCE SOURCE
package instruction - ZIP, ZIP5,.15,.2,67TB TO-263, - , SIP5,.1,67TB
Reach Compliance Code - unknow compli - unknow
Interface integrated circuit type - BUFFER OR INVERTER BASED PERIPHERAL DRIVER BUFFER OR INVERTER BASED PERIPHERAL DRIVER - BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 code - R-PZFM-T5 R-PSSO-G4 - R-PSFM-T5
Nominal output peak current - 51 A 9.8 A - 51 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR
Package form - FLANGE MOUNT SMALL OUTLINE - FLANGE MOUNT
Maximum supply voltage - 41 V 41 V - 41 V
Minimum supply voltage - 4.75 V 4.75 V - 4.75 V
Nominal supply voltage - 12 V 12 V - 12 V
surface mount - NO YES - NO
technology - MOS MOS - MOS
Terminal pitch - 1.7 mm 1.7 mm - 1.7 mm
Disconnect time - 250 µs 250 µs - 250 µs
connection time - 200 µs 200 µs - 200 µs
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