PROFET® BTS426L1
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1)
•
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
I
L(SCr)
TO-220AB/5
43
V
5.0 ... 34 V
60 mΩ
7.0
A
16
A
5
5
1
Straight leads
1
5
Standard
SMD
• µC
compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically
integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
source
V
Logic
Voltage
sensor
3
Overvoltage
protection
Current
limit
Gate
protection
OUT
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
Short to Vbb
detection
2
IN
Temperature
sensor
5
ESD
Logic
Load
4
ST
R
O
GND
PROFET
Load GND
GND
1
Signal GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST connection, reverse load
current limited by connected load.
Semiconductor Group
1 of 14
2003-Oct-01
BTS426L1
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
Output to the load
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
Ω,
R
L
= 1.7
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
I
L
= 7.0 A, Z
L
= 24 mH, 0
Ω:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol
V
bb
V
bb
V
Load dump4
)
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
V
IN
I
IN
I
ST
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
75
0.74
1.0
2.0
-10 ... +16
±2.0
±5.0
Unit
V
V
V
A
°C
W
J
kV
V
mA
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case:
R
thJC
junction - ambient (free air):
R
thJA
SMD version, device on PCB
5)
:
min
--
--
Values
typ
--
--
34
Unit
max
1.67
75
K/W
2
)
3)
4)
5
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a 150
Ω
resistor in the
GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb connection. PCB is vertical
without blown air.
Semiconductor Group
2
2003-Oct-01
BTS426L1
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
min
Values
typ
Unit
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A
T
j
=25 °C:
R
ON
T
j
=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or GND pulled
up,
V
bb
=30 V,
V
IN
= 0, see diagram page 7
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Operating Parameters
Operating voltage
6
)
Undervoltage shutdown
Undervoltage restart
5.8
I
L(ISO)
I
L(GNDhigh)
t
on
t
off
dV /dt
on
-dV/dt
off
--
80
80
0.1
0.1
--
50
100
7.0
--
200
230
--
--
60
120
--
10
400
450
1
1
A
mA
µs
mΩ
V/µs
V/µs
T
j
=-40...+150°C:
V
bb(on)
T
j
=-40...+150°C:
V
bb(under)
T
j
=-40...+25°C:
V
bb(u rst)
T
j
=+150°C:
Undervoltage restart of charge pump
V
bb(ucp)
see diagram page 12
T
j
=-40...+150°C:
Undervoltage hysteresis
∆V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
∆V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C:
V
bb(over)
Overvoltage restart
T
j
=-40...+150°C:
V
bb(o rst)
Overvoltage hysteresis
T
j
=-40...+150°C:
∆V
bb(over)
Overvoltage protection
7
)
T
j
=-40...+150°C:
V
bb(AZ)
I
bb
=40 mA
Standby current (pin 3)
V
IN
=0
T
j
=-40...+25°C
:
I
bb(off)
T
j
= 150°C:
I
L(off)
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
8)
,
V
IN
=5 V,
T
j
=-40...+150°C
I
GND
5.0
3.5
--
--
--
34
33
--
42
--
--
--
5.6
0.2
--
--
0.5
47
34
5.0
5.0
7.0
7.0
--
43
--
--
--
V
V
V
V
V
V
V
V
V
--
--
--
--
10
12
--
1.8
25
28
12
3.5
µA
µA
mA
6)
7)
8
)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
3
2003-Oct-01
BTS426L1
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
min
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
21
15
11
I
L(SCr)
--
I
L
= 40 mA:
V
ON(CL)
T
jt
∆
T
jt
-V
bb
T
j
=150 °C:
-V
ON(rev)
41
150
--
--
--
Values
typ
Unit
max
Protection Functions
9)
Initial peak short circuit current limit (pin 3 to 5)
32
25
17
16
47
--
10
--
610
43
35
24
--
53
--
--
32
--
A
Repetitive short circuit shutdown current limit
T
j
=
T
jt
(see timing diagrams, page 10)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
10
)
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -4 A
Diagnostic Characteristics
Open load detection current
(on-condition)
A
V
°C
K
V
mV
T
j
=-40 °C
:
I
L (OL)
T
j
=25 ..150°C:
20
10
2
4
--
--
3
10
850
750
4
30
mA
V
kΩ
Open load detection voltage
11
) (off-condition)
T
j
=-40..150°C:
V
OUT(OL)
Internal output pull down
(pin 5 to 1),
V
OUT
=5 V,
T
j
=-40..150°C
R
O
9
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault
conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive
operation.
10
) Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by
the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop
across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status
currents have to be limited (see max. ratings page 2 and circuit page 7).
11)
External pull up resistor required for open load detection in off state.
Semiconductor Group
4
2003-Oct-01
BTS426L1
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
min
Values
typ
Unit
max
Input and Status Feedback
12
)
Input resistance
T
j
=-40..150°C, see circuit page 6
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V,
T
j
=-40..+150°C
On state input current (pin 2),
V
IN
= 3.5 V,
T
j
=-40..+150°C
R
I
T
j
=-40..+150°C:
V
IN(T+)
T
j
=-40..+150°C:
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST OL4)
t
d(ST)
2.5
1.7
1.5
--
1
20
100
--
3.5
--
--
0.5
--
50
520
250
6
3.5
--
--
50
90
1000
600
kΩ
V
V
V
µA
µA
µs
µs
Delay time for status with open load after switch off
(see timing diagrams, page 11
),
T
j
=-40..+150°C
Status invalid after positive input slope
(open load)
T
j=-40 ... +150°C:
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+25°C,
I
ST
= +1.6 mA:
T
j
= +150°C,
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
12)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
5
2003-Oct-01
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