IDP09E60
IDB09E60
Fast Switching EmCon Diode
Feature
•
600 V EmCon technology
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
175°C operating temperature
•
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
P-TO220-3.SMD
600
9
1.5
175
P-TO220-2-2.
V
A
V
°C
Type
IDP09E60
IDB09E60
Package
P-TO220-2-2.
Ordering Code
Q67040-S4483
Marking
D09E60
D09E60
Pin 1
C
NC
PIN 2
A
C
PIN 3
-
A
P-TO220-3.SMD Q67040-S4482
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25°C
T
C
=90°C
Symbol
V
RRM
I
F
Value
600
19.3
13
Unit
V
A
Surge non repetitive forward current
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
I
FRM
P
tot
40
29.5
W
57.7
32.7
Maximum repetitive forward current
T
C
=25°C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
j ,
T
stg
T
S
-55...+175
255
°C
°C
Rev.2
Page 1
2003-07-31
IDP09E60
IDB09E60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
35
max.
2.6
62
62
-
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=600V,
T
j
=25°C
V
R
=600V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.5
1.5
50
750
V
2
-
Forward voltage drop
I
F
=9A,
T
j
=25°C
I
F
=9A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP09E60
IDB09E60
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
75
110
112
10.2
11.8
12.3
343
585
612
4
5.5
5.7
-
-
-
A
-
-
-
nC
-
-
-
-
-
-
Peak reverse current
V
R
=400V,
I
F
= 9A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=400V,
I
F
=9A, di
F
/dt=800A/µs,
T
j
=150°C
Rev.2
Page 3
2003-07-31
IDP09E60
IDB09E60
1 Power dissipation
P
tot
=
f
(T
C
)
parameter: Tj
≤
175 °C
60
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
175°C
20
W
50
45
A
16
14
P
tot
40
I
F
35
30
25
20
15
10
5
0
25
50
75
100
125
175
12
10
8
6
4
2
0
25
°C
T
C
50
75
100
125
°C
T
C
175
3 Typ. diode forward current
I
F
=
f
(V
F
)
27
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2
18A
A
21
18
-55°C
25°C
100°C
150°C
V
V
F
I
F
1.6
9A
15
12
1.4
9
4,5A
6
3
0
0
1.2
0.5
1
1.5
V
V
F
2.5
1
-60
-20
20
60
100
160
°C
T
j
Rev.2
Page 4
2003-07-31
IDP09E60
IDB09E60
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
350
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125 °C
800
nC
ns
700
18A
Q
rr
250
18A
9A
4.5A
650
600
550
500
t
rr
9A
200
150
450
400
350
4.5A
100
50
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
300
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
14
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
14
A
12
11
18A
9A
4.5A
10
18A
9A
4.5A
I
rr
10
9
8
7
6
S
8
6
4
2
300
400
500
600
700
800
5
4
200
0
200
A/µs
1000
di
F
/dt
300
400
500
600
700
800
A/µs
1000
di
F
/dt
Rev.2
Page 5
2003-07-31
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