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SP8M9

Description
Switching
CategoryDiscrete semiconductor    The transistor   
File Size70KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

SP8M9 Overview

Switching

SP8M9 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee2
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)36 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
SP8M9
Transistors
Switching
SP8M9
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3
3.9±0.15
Max.1.75
1.5±0.1
0.15
Application
Power switching, DC / DC converter.
1.27
0.4±0.1
0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
MOUNTED ON A CERAMIC BOARD.
Equivalent circuit
Limits
Nchannel
Pchannel
30
−30
20
−20
±9.0
±5.0
±36
±20
1.6
−1.6
36
−20
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Continuous
Pulsed
Continuous
Pulsed
∗1
∗1
∗2
∗2
∗2
0.5±0.1
(1)
(4)
0.2±0.1
(1) (2) (3) (4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
(Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED
ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C
/ W
1/5
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