Q67000-S314 datasheet, PDF - EEWORLD Datasheet

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Q67000-S314: Description0.19 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size310KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Q67000-S314 Overview

0.19 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

Q67000-S314 Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	240 V
Processing package description	SOT-223, 4 PIN
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	DRAIN
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	1.5 W
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	DEPLETION
Transistor type	universal power supply
Maximum leakage current	0.1900 A
Maximum drain on-resistance	20 ohm
Maximum leakage current pulse	0.5700 A

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SIPMOS

Small-Signal Transistor

BSP 129

240 V

0.2 A

DS(on)

Ω

N channel

Depletion mode

High dynamic resistance

Available grouped in

GS(th)

Type

Ordering

Code

Tape and Reel Information Pin Configuration Marking Package

BSP 129 SOT-223

BSP 129 Q67000-S073 E6327: 1000 pcs/reel

BSP 129 Q67000-S314 E7941: 1000 pcs/reel

GS(th)

selected in groups:

(see

page 212)

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage,

= 20 kΩ

Gate-source voltage

Gate-source peak voltage, aperiodic

Continuous drain current,

= 34 ˚C

Pulsed drain current,

Max. power dissipation,

Symbol

Values

240

0.2

0.6

1.7

– 55 … + 150

55/150/56

Unit

DGR

D puls

tot

stg

thJA

thJS

–

˚C

K/W

–

= 25 ˚C

Operating and storage temperature range

Thermal resistance

chip-ambient

chip-soldering point

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Transistor on epoxy pcb 40 mm

40 mm

1.5 mm with 6 cm

copper area for drain connection.

Semiconductor Group

09.96

Q67000-S314 Related Products

	Q67000-S314	BSP129	Q67000-S073
Description	0.19 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET	0.19 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET	0.19 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	4	4	4
surface mount	Yes	YES	Yes
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	pair
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
Transistor component materials	silicon	SILICON	silicon
Minimum breakdown voltage	240 V	-	240 V
Processing package description	SOT-223, 4 PIN	-	SOT-223, 4 PIN
state	TRANSFERRED	-	TRANSFERRED
packaging shape	Rectangle	-	Rectangle
Package Size	SMALL OUTLINE	-	SMALL OUTLINE
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy
structure	single	-	single
Maximum ambient power consumption	1.5 W	-	1.5 W
Channel type	N channel	-	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR
operating mode	DEPLETION	-	DEPLETION
Transistor type	universal power supply	-	universal power supply
Maximum leakage current	0.1900 A	-	0.1900 A
Maximum drain on-resistance	20 ohm	-	20 ohm
Maximum leakage current pulse	0.5700 A	-	0.5700 A

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