BSP 324
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
•
V
GS(th)
= 1.5 ...2.5 V
Pin 1
G
Type
BSP 324
Type
BSP 324
Pin 2
D
Pin 3
S
Pin 4
D
V
DS
400 V
I
D
0.17 A
R
DS(on)
25
Ω
Package
SOT-223
Marking
BSP 324
Ordering Code
Q67000-S215
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
400
400
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
±
14
±
20
A
0.17
T
A
= 33 °C
DC drain current, pulsed
I
Dpuls
0.68
T
A
= 25 °C
Power dissipation
P
tot
1.7
W
T
A
= 25 °C
Semiconductor Group
1
Sep-12-1996
BSP 324
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
72
≤
12
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
R
thJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
400
-
2
10
8
10
20
-
2.5
100
50
100
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
1.5
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
nA
µA
nA
-
Ω
-
25
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.17 A
Semiconductor Group
2
Sep-12-1996
BSP 324
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.1
0.17
90
10
4
-
S
pF
-
120
15
6
ns
-
5
8
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.17 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
GS
= 50
Ω
Rise time
t
r
-
10
15
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
18
25
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
GS
= 50
Ω
Fall time
t
f
-
15
20
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
GS
= 50
Ω
Semiconductor Group
3
Sep-12-1996
BSP 324
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.85
300
0.82
0.17
0.68
V
-
1.3
ns
-
-
µC
-
-
Values
typ.
max.
Unit
I
SM
V
SD
t
rr
Q
rr
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.34 A,
T
j
= 25 °C
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Semiconductor Group
4
Sep-12-1996
Test/Measurement
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