Differential Magnetoresistive Sensor
FP 210 L 100-22
Features
• High operating
temperature
• High output voltage
• Robust cylindrical
housing
• Biasing magnet build in
• Signal amplitude
independent of speed
• Easily connectable
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of
rotation
• Angle encoder
• Linear position sensing
Dimensions in mm
Type
FP 210 L 100-22
Ordering Code
Q65210-L100-W4
The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled
L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are
mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor
is encapsulated in a plastic package with three in-line contacts extending from the base.
The basic resistance of the total system in the unbiased state is 2×100
Ω.
A permanent
magnet which supplies a biasing magnetic field is built into the housing.
Semiconductor Group
1
07.96
FP 210 L 100-22
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
Insulation voltage between
terminals and casing
Thermal conductivity
Characteristics (
T
A
= 25
°C)
Nominal supply voltage
Total resistance, (δ =
∞,
I
≤
1 mA)
Center symmetry
3)
(δ =
∞)
Offset voltage
4)
(at
V
IN N
and
δ
=
∞)
Open circuit output voltage
5)
(
V
IN N
and
δ
= 0.2 mm)
Cut-off frequency
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
V
OUT
.
Symbol
Value
– 40/ +140
– 40/ +150
400
7.5
> 100
≥
5
Unit
°C
°C
mW
V
V
mW/K
T
A
T
stg
P
tot
V
IN
V
I
G
thA
V
IN N
R
1-3
M
V
0
V
out pp
f
c
5
220…400
≤
10
≤
130
> 1000
> 20
V
Ω
%
mV
mV
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
A
)
2) Corresponding to diagram
V
IN
=
f(T
A
)
3)
R
1
–
2
–
R
2
–
3
M
= ---------------------------
×
100% for
R
1-2
>
R
2-3
-
R
1
–
2
4) Corresponding to measuring circuit in
Fig. 2
5) Corresponding to measuring circuit in
Fig. 2
and arrangement as shown in
Fig. 1
Semiconductor Group
2
FP 210 L 100-22
1. Digital revolution counting
For digital revolution counting, the sensor should be actuated by a magnetically soft iron
toothed wheel. The tooth spacing should correspond to about twice the magneto resistor
intercenter spacing (see
Fig. 1).
The two resistors of the sensor are supplemented by two additional resistors in order to
obtain the sensor output voltage as a bridge voltage
V
OUT
. The output voltage
V
OUT
without excitation then is 0 V when the offset is compensated.
Fig. 1
Schematic representation of a toothed wheel actuating an FP 210 L 100-22
Fig. 2
Measuring circuit and output voltage
V
out
waveform
Semiconductor Group
3
FP 210 L 100-22
2. Linear distance measurement
To convert small distances into a proportional electric signal, a small soft iron part of
definite width (e.g.
b
= 1.8 mm) is moved over the face of the sensor.
Proportional signals for distances up to 1.5 mm can be obtained in this way. The
sinusoidal output signal gives a voltage proportional to distance in the zero crossover
region (see
Fig. 3).
Fig. 3
Arrangement for analogue application
Maximum supply voltage
versus temperature
V
IN
=
f
(
T
A
),
δ
=
∞
Semiconductor Group
4
FP 210 L 100-22
Output voltage (typical) versus
temperature
V
OUTpp
=
f
(
T
A
),
δ
= 0.2 mm
=
V
OUTpp
at
T
A
= 25
°C
^ 100%
Output voltage (typical) versus
airgap
V
OUTpp
=
f
(δ),
T
A
= 25
°C
=
V
OUTpp
at
δ
= 0.2 mm ^ 100%
Total resistance (typical)
versus temperature
R
1-3
=
f
(
T
A
),
δ
=
∞
Max. power dissipation
versus temperature
P
tot
=
f
(
T
A
),
δ
=
∞
Semiconductor Group
5
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