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Q62703-Q395

Description
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
File Size32KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

Q62703-Q395 Overview

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
Chip
position
LD 261
2.4
2.1
1.9
1.7
0.5
0.4
2.7
2.5
0.25
0.15
0.7
0.6
0 ... 5
0.4 A
A
Radiant sensitive area
(0.4 x 0.4)
1.4
1.0
Collector (BPX 81)
Cathode (LD 261)
2.1
1.5
2.54 mm spacing
3.5
3.0
3.6
3.2
1) Detaching area for tools, flash not true to size.
Approx. weight 0.03 g
GEO06021
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
GaAs-IR-Lumineszenzdiode, hergestellt im
Schmelzepitaxieverfahren
q
Hohe Zuverlässigkeit
q
Gruppiert lieferbar
q
Gehäusegleich mit BPX 81
Anwendungen
q
Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
q
Lochstreifenleser
q
Industrieelektronik
q
“Messen/Steuern/Regeln”
Features
q
GaAs infrared emitting diode, fabricated in a
liquid phase epitaxy process
q
High reliability
q
Available in bins
q
Same package as BPX 81
Applications
q
Miniature photointerrupters
q
Punched tape readers
q
Industrial electronics
q
For control and drive circuits
Typ
Type
LD 261
LD 261-5
Bestellnummer
Ordering Code
Q62703-Q395
Q62703-Q67
Gehäuse
Package
Leiterbandgehäuse, klares Epoxy-Gießharz, linsenför-
mig im 2.54-mm-Raster (
1
/
10
’’), Kathodenkennzeich-
nung: Nase am Lötspieß
Lead frame, transparent epoxy resin lens, solder tabs
lead spacing 2.54 mm (
1
/
10
’’), cathode marking: projec-
tion at solder lead
Semiconductor Group
1
1997-11-01
feo06021

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Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
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