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UPD4442181GF-C75

Description
Cache SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
Categorystorage    storage   
File Size196KB,24 Pages
ManufacturerNEC Electronics
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UPD4442181GF-C75 Overview

Cache SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

UPD4442181GF-C75 Parametric

Parameter NameAttribute value
Objectid1912823505
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time7.5 ns
JESD-30 codeR-PQFP-G100
length20 mm
memory density4718592 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm

UPD4442181GF-C75 Preview

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4442161, 4442181, 4442321, 4442361
4M-BIT CMOS SYNCHRONOUS FAST SRAM
FLOW THROUGH OPERATION
Description
The
µ
PD4442161 is a 262,144-word by 16-bit, the
µ
PD4442181 is a 262,144-word by 18-bit, the
µ
PD4442321 is a
131,072-word by 32-bit and the
µ
PD4442361 is a 131,072-word by 36-bit synchronous static RAM fabricated with
advanced CMOS technology using Full-CMOS six-transistor memory cell.
The
µ
PD4442161,
µ
PD4442181,
µ
PD4442321 and
µ
PD4442361 integrate unique synchronous peripheral circuitry,
2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the
single clock input (CLK).
The
µ
PD4442161,
µ
PD4442181,
µ
PD4442321 and
µ
PD4442361 are suitable for applications which require
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer
memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).
In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal
operation.
The
µ
PD4442161,
µ
PD4442181,
µ
PD4442321 and
µ
PD4442361 are packaged in 100-pin PLASTIC LQFP with a
1.4 mm package thickness for high density and low capacitive loading.
Features
3.3 V (A version) or 2.5 V (C version) Core Supply
Synchronous operation
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs for flow through operation
All registers triggered off positive clock edge
3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs
Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 - /BW4 (
µ
PD4442321,
µ
PD4442361), /BW1 - /BW2 (
µ
PD4442161,
µ
PD4442181), /BWE
Global write enable : /GW
Three chip enables for easy depth expansion
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14519EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2000
µ
PD4442161, 4442181, 4442321, 4442361
5
Ordering Information
Part number
Access
Time
ns
Clock
Frequency
MHz
133
117
100
133
117
100
133
117
100
133
117
100
117
100
117
100
117
100
117
100
2.5 ± 0.125
2.5 V LVTTL
C version
Core Supply
Voltage
V
3.3 ± 0.165
3.3 V or 2.5 V
LVTTL
100-pin PLASTIC
LQFP (14
×
20)
A version
I/O
Interface
Package
Remark
µ
PD4442161GF-A65
µ
PD4442161GF-A75
µ
PD4442161GF-A85
µ
PD4442181GF-A65
µ
PD4442181GF-A75
µ
PD4442181GF-A85
µ
PD4442321GF-A65
µ
PD4442321GF-A75
µ
PD4442321GF-A85
µ
PD4442361GF-A65
µ
PD4442361GF-A75
µ
PD4442361GF-A85
µ
PD4442161GF-C75
Note
µ
PD4442161GF-C85
Note
µ
PD4442181GF-C75
Note
µ
PD4442181GF-C85
Note
µ
PD4442321GF-C75
Note
µ
PD4442321GF-C85
Note
µ
PD4442361GF-C75
Note
µ
PD4442361GF-C85
Note
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
Note
Under development
2
Preliminary Data Sheet M14519EJ2V0DS
µ
PD4442161, 4442181, 4442321, 4442361
Pin Configurations (Marking Side)
/××× indicates active low signal.
100-pin PLASTIC LQFP (14
×
20)
[
µ
PD4442161GF,
µ
PD4442181GF ]
/BWE
/BW2
/BW1
/ADV
/CE2
/GW
CLK
CE2
V
DD
V
SS
/CE
/AC
/AP
NC
NC
A6
A7
A8
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
V
DD
Q
V
SS
Q
NC
NC
I/O9
I/O10
V
SS
Q
V
DD
Q
I/O11
I/O12
NC
V
DD
NC
V
SS
I/O13
I/O14
V
DD
Q
V
SS
Q
I/O15
I/O16
I/OP2, NC
NC
V
SS
Q
V
DD
Q
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A17
NC
NC
V
DD
Q
V
SS
Q
NC
I/OP1, NC
I/O8
I/O7
V
SS
Q
V
DD
Q
I/O6
I/O5
V
SS
NC
V
DD
ZZ
I/O4
I/O3
V
DD
Q
V
SS
Q
I/O2
I/O1
NC
NC
V
SS
Q
V
DD
Q
NC
NC
NC
V
DD
NC
NC
A10
A11
A12
A13
A14
A15
MODE
Remark
Refer to
Package Drawing
for 1-pin index mark.
A16
V
SS
NC
NC
A5
A4
A3
A2
A1
A0
A9
/G
Preliminary Data Sheet M14519EJ2V0DS
3
µ
PD4442161, 4442181, 4442321, 4442361
Pin Identifications
[
µ
PD4442161GF,
µ
PD4442181GF ]
Symbol
A0 - A17
Pin No.
37, 36, 35, 34, 33, 32, 100, 99, 82, 81,
44, 45, 46, 47, 48, 49, 50, 80
I/O1 - I/O16
58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12,
13, 18, 19, 22, 23
I/OP1, NC
I/OP2, NC
/ADV
/AP
/AC
/CE, CE2, /CE2
/BW1, /BW2, /BWE
/GW
/G
CLK
MODE
Note
Note
Description
Synchronous Address Input
Synchronous Data In,
Synchronous / Asynchronous Data Out
Synchronous Data In (Parity),
Synchronous / Asynchronous Data Out (Parity)
Synchronous Burst Address Advance Input
Synchronous Address Status Processor Input
Synchronous Address Status Controller Input
Synchronous Chip Enable Input
Synchronous Byte Write Enable Input
Synchronous Global Write Input
Asynchronous Output Enable Input
Clock Input
Asynchronous Burst Sequence Select Input
Do not change state during normal operation
74
24
83
84
85
98, 97, 92
93, 94, 87
88
86
89
31
ZZ
V
DD
V
SS
V
DD
Q
V
SS
Q
NC
64
15, 41, 65, 91
17, 40, 67, 90
4, 11, 20, 27, 54, 61, 70, 77
5, 10, 21, 26, 55, 60, 71, 76
1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 38,
39, 42, 43, 51, 52, 53, 56, 57, 66, 75,
78, 79, 95, 96
Asynchronous Power Down State Input
Power Supply
Ground
Output Buffer Power Supply
Output Buffer Ground
No Connection
Note
NC (No Connection) is used in the
µ
PD4442161GF.
I/OP1 - I/OP2 are used in the
µ
PD4442181GF.
4
Preliminary Data Sheet M14519EJ2V0DS
µ
PD4442161, 4442181, 4442321, 4442361
100-pin PLASTIC LQFP (14
×
20)
[
µ
PD4442321GF,
µ
PD4442361GF ]
/BWE
/BW4
/BW3
/BW2
/BW1
/ADV
/CE2
/GW
CE2
CLK
V
DD
V
SS
/AC
/CE
/AP
A6
A7
A8
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3, NC
I/O17
I/O18
V
DD
Q
V
SS
Q
I/O19
I/O20
I/O21
I/O22
V
SS
Q
V
DD
Q
I/O23
I/O24
NC
V
DD
NC
V
SS
I/O25
I/O26
V
DD
Q
V
SS
Q
I/O27
I/O28
I/O29
I/O30
V
SS
Q
V
DD
Q
I/O31
I/O32
I/OP4, NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/OP2, NC
I/O16
I/O15
V
DD
Q
V
SS
Q
I/O14
I/O13
I/O12
I/O11
V
SS
Q
V
DD
Q
I/O10
I/O9
V
SS
NC
V
DD
ZZ
I/O8
I/O7
V
DD
Q
V
SS
Q
I/O6
I/O5
I/O4
I/O3
V
SS
Q
V
DD
Q
I/O2
I/O1
I/OP1, NC
NC
NC
A10
A11
A12
A13
A14
A15
MODE
Remark
Refer to
Package Drawing
for 1-pin index mark.
A16
V
DD
V
SS
A5
A4
A3
A2
A1
A0
NC
NC
A9
/G
Preliminary Data Sheet M14519EJ2V0DS
5
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