NPN Silicon Switching Transistors
PZT 2222
PZT 2222 A
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: PZT 2907 (PNP)
PZT 2907 A (PNP)
Type
PZT 2222
PZT 2222 A
Marking
ZT 2222
ZT 2222 A
Ordering Code
(tape and reel)
Q62702-Z2026
Q62702-Z2027
Pin Configuration
1
2
3
4
B
C
E
C
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
=
110 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
87
≤
27
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
PZT 2222
PZT 2222 A
30
60
5
40
75
6
600
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
PZT 2222
PZT 2222 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
PZT 2222
PZT 2222 A
Collector-base breakdown voltage
I
C
= 10
µ
A,
I
B
= 0
PZT 2222
PZT 2222 A
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
E
= 0
Collector-base cutoff current
V
CB
= 50 V,
I
E
= 0
V
CB
= 50 V,
I
E
= 0,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
Collector-emitter cutoff current
V
CE
= 30 V,
– V
BE
= 0.5 V
Emitter-base cutoff current
V
CE
= 30 V,
– V
BE
= 0.5 V
DC current gain
1)
I
C
= 0.1 mA,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
PZT 2222
PZT 2222 A
I
CB0
PZT 2222
PZT 2222 A
PZT 2222
PZT 2222 A
I
EB0
I
CEV
I
EBV
h
FE
35
50
75
100
30
40
–
–
–
–
–
–
–
–
–
300
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
20
10
20
10
10
50
50
–
nA
nA
µ
A
µ
A
nA
V
(BR)CE0
30
40
V
(BR)CB0
60
75
V
(BR)EB0
5
6
–
–
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
PZT 2222
PZT 2222 A
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
PZT 2222
PZT 2222 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
PZT 2222
PZT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
PZT 2222
PZT 2222 A
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
PZT 2222
PZT 2222 A
PZT 2222
PZT 2222 A
V
CEsat
–
–
–
–
V
BEsat
–
–
–
–
–
–
–
–
1.3
1.2
2.6
2.0
–
–
–
–
0.4
0.3
1.6
1.0
V
Values
typ.
max.
Unit
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA
Delay time
Rise time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
=
I
B2
= 15 mA
Storage time
Fall time
(see diagrams)
f
T
C
obo
C
ibo
200
–
–
–
–
–
–
8
30
MHz
pF
t
d
t
r
t
stg
t
f
–
–
–
–
–
–
–
–
10
25
225
60
ns
ns
ns
ns
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
3
PZT 2222
PZT 2222 A
Input waveform and test circuit for determining delay, rise and turn-on time
Turn-on time when switched to
I
Con
= 150 mA;
I
Bon
= 15 mA
Input waveform and test circuit for determining storage, fall and turn-off time
Turn-off time when switched to
I
Con
= 150 mA;
I
Bon
= 15 mA to cut-off with –
I
Boff
= 15 mA
Pulse generator:
duty factor
pulse duration
rise time
output impedance
D
=2%
t
p
= 200 ns
t
r
≤
2 ns
Z
o
= 50
Ω
Oscillograph:
rise time
output impedance
t
r
≤
5 ns
Z
i
= 10 MΩ
Semiconductor Group
4
PZT 2222
PZT 2222 A
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 20 V,
f
= 100 MHz
Saturation voltage
I
C
=
f
(V
BEsat
,
V
CEsat
)
h
FE
= 10
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 10 V
Semiconductor Group
5
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