SMART
Features
•
•
•
•
•
•
•
•
•
•
•
®
SM5363240U4EUUU
Preliminary
Modular Technologies
128MByte (32M x 36) DRAM Module - 16Mx4 based
72-pin SIMM, ECC
Part Numbers
SM536324004EUUU
SM536324014EUUU
SM536324084EUUU
SM536324094EUUU
:
:
:
:
Standard
:
JEDEC (5.0V FPM only)
Configuration
:
ECC
Access Time
:
50/60/70ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3V/5.0V
Refresh
:
4K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 1.200"
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Functional Diagram
CAS0#
RAS0#
16Mx8
Block
16Mx8
Block
16Mx8
Block
16Mx12
Block
CAS1#
RAS1#
16Mx8
Block
16Mx8
Block
16Mx8
Block
16Mx12
Block
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ35
DQ0~DQ35
Notes : 1.
2.
3.
4.
A0~A11 to all DRAMs.
WE# to all DRAMs.
OE# to all DRAMs.
Each 16Mx8 block comprises of two 16Mx4 DRAMs and
each 16Mx12 block comprises of three 16Mx4 DRAMs.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A11
DQ0~DQ35
RAS0#, RAS1#
CAS0#, CAS1#
WE#
OE#
PD1~PD5
V
CC
V
SS
NC
®
SM5363240U4EUUU
Preliminary
Modular Technologies
Pin
No.
Row and Column Addresses
for 4K Refresh Module
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Output Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
CC
PD5
A0
A1
A2
A3
A4
A5
A6
OE#
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A7
DQ16
V
CC
A8
A9
NC
NC
DQ17
DQ18
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
DQ19
DQ20
V
SS
CAS0#
A10
A11
CAS1#
RAS0#
RAS1#
DQ21
WE#
V
SS
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
V
CC
DQ32
DQ33
DQ34
DQ35
NC
NC
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
50ns
60ns
70ns
TBD
NC
NC
V
SS
TBD
V
SS
TBD
NC
V
SS
TBD
NC
NC
TBD
NC
NC
Pin
PD1
PD2
PD3
PD4
PD5
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5363240U4EUUU
Preliminary
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
18
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
18
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%/5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, CAS#)
Input Capacitance (WE#, OE#)
Input/Output Capacitance (DQ0~DQ35)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I2
C
I/O
Max
100
73
136
24
Unit
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Vcc=3.3V
Typ
Max
3.3
3.6
0
-
-
0
V
CC
+0.3
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
2.4
-1.0
0
-
-
0
V
CC
+1.0
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5363240U4EUUU
Preliminary
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
50ns
60ns
70ns
Min Max Min Max Min Max
-180 180 -180 180 -180 180
-20
20 -20
20
-20 20
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
Unit
µ
A
µ
A
V
V
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
50ns
60ns
70ns
Min Max Min Max Min Max
-180 180 -180 180 -180 180
-20
20
-20
20
-20
20
Unit
µ
A
µ
A
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
FPM-based Modules
®
SM5363240U4EUUU
Preliminary
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
50ns
1368
Max.
60ns
1278
Unit
70ns
1188
mA
Note
1, 2
36
36
36
mA
Standby Current
I
CC2
18
1368
1368
738
18
1278
1278
648
18
1188
1188
603
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
50ns
1368
Max.
60ns
1278
Unit
70ns
1188
mA
Note
1, 2
36
36
36
mA
Standby Current
I
CC2
18
1368
1368
738
18
1278
1278
648
18
1188
1188
603
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
京公网安备 11010802033920号
EEWORLD
