BF 799W
NPN Silicon RF Transistor
• For linear broadband amplifier applications
up to 500MHz
• SAW filter driver in TV tuners
Type
BF 799W
Marking Ordering Code
LKs
Q62702-F1571
Pin Configuration
1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
20
30
30
3
35
10
mW
280
150
- 65 ... - 150
≤
155
°C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
R
thJS
T
S
≤
107 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
K/W
Semiconductor Group
1
Nov-28-1996
BF 799W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
20
-
-
-
-
95
100
0.15
-
-
-
-
V
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
V
(BR)CBO
30
I
C
= 10 µA,
I
E
= 0
Base-emitter breakdown voltage
V
(BR)EBO
3
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
I
CBO
-
100
nA
-
35
40
-
250
V
-
0.5
0.95
V
CB
= 20 V,
I
E
= 0
DC current gain
h
FE
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 20 mA,
V
CE
= 10 V
Collector-emitter saturation voltage
V
CEsat
V
BEsat
-
I
C
= 20 mA,
I
B
= 2 mA
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
Semiconductor Group
2
Nov-28-1996
BF 799W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Transition frequency
Values
typ.
max.
Unit
f
T
-
-
800
1100
0.7
0.28
0.96
-
-
MHz
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 8 V,
f
= 100 MHz
Collector-base capacitance
C
cb
-
-
-
-
pF
V
CB
= 10 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Collector-emitter capacitance
C
ce
-
V
CE
= 10 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Output capacitance
C
ob
-
V
CB
= 10 V,
I
E
= 0 mA,
f
= 1 MHz
Noise figure
F
-
3
60
-
dB
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
Z
S
= 50
Ω
Output conductance
g
22e
-
-
µS
I
C
= 20 mA,
V
CE
= 10 V,
f
= 35 MHz
Semiconductor Group
3
Nov-28-1996
BF 799W
Total power dissipation
P
tot
=
f
(T
A
*,
T
S
)
* Package mounted on epoxy
300
mW
260
P
tot
240
220
200
180
160
140
120
100
80
60
40
20
0
0
T
S
T
A
20
40
60
80
100
120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
K/W
R
thJS
10
2
P
totmax
/P
totDC
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
Semiconductor Group
4
Nov-28-1996
BF 799W
Transition frequency
f
T
=
f
(I
C
)
f
= 100MHz
V
CE
= Parameter
Collector-base capacitance
C
cb
=
f
(V
CB
)
V
BE
=
v
be
= 0,
f
= 1MHz
Semiconductor Group
5
Nov-28-1996
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