BCP 70M
PNP Silicon AF Power Transistor
Preliminary data
•
For AF driver and output stages
•
High collector current
•
Low collector-emitter saturation voltage
4
5
3
2
1
VPW05980
Type
BCP 70M
Marking Ordering Code Pin Configuration
PBs
Q62702-C2596
Package
1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
≤
94 °C
Junction temperature
Storage temperature
Symbol
Value
32
32
5
3
6
200
500
1.7
150
-65...+150
W
°C
mA
A
Unit
V
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
1)
Junction - soldering point
R
thJA
R
thJS
≤
88
≤
33
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
1
1
Jun-05-1998
1998-11-01
BCP 70M
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
Unit
max.
-
-
-
100
20
100
nA
µA
nA
-
V
min.
DC Characteristics
Collector-emitter breakdown voltage
typ.
-
-
-
-
-
-
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
EBO
h
FE
32
32
5
-
-
-
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 2 A,
V
CE
= 2 V
Collector-emitter saturation voltage1)
25
85
50
-
-
-
0.18
-
-
475
-
-
1.2
V
V
CEsat
V
BEsat
-
-
I
C
= 2 A,
I
B
= 0.2 A
Base-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
AC Characteristics
Transition frequency
f
T
C
cb
-
-
100
80
-
-
MHz
pF
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
2
2
Jun-05-1998
1998-11-01
BCP 70M
Total power dissipation
P
tot
=
f
(T
A
*;T
S
)
* Package mounted on epoxy
2000
mW
1600
1400
T
S
P
tot
1200
1000
800
600
400
200
0
0
T
A
20
40
60
80
100
120
°C
150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
f
(t
p
)
10
2
10
3
P
totmax
/ P
totDC
K/W
-
R
thJS
10
1
10
2
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
Semiconductor Group
Semiconductor Group
3
3
Jun-05-1998
1998-11-01
BCP 70M
DC current gain
h
FE
=
f
(I
C
)
Collector-emitter saturation voltage
V
CE
= 2V
10
3
I
C
=
f
(V
CEsat
),
h
FE
= 10
10
4
mA
-
100°C
25°C
h
FE
10
2
-55°C
3
I
C
10
100°C
25°C
-50°C
10
2
10
1
10
1
10
0 0
10
10
1
10
2
10
3
mA
10
4
10
0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
V
0.50
I
C
V
CEsat
Base-emitter saturation voltage
Collector current
I
C
=
f
(V
BE
)
I
C
=
f
(V
BEsat
),
h
FE
= 10
10
4
mA
V
CE
= 2V
10
4
mA
I
C
10
3
3
I
C
10
-50°C
25°C
100°C
10
2
10
2
-50°C
25°C
100°C
10
1
10
1
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
V
BEsat
V
BE
Semiconductor Group
Semiconductor Group
4
4
Jun-05-1998
1998-11-01
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