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Q62702-C2330

Description
500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size93KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

Q62702-C2330 Overview

500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

Q62702-C2330 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption0.3000 W
Transistor typeUniversal small signal
Minimum DC amplification factor250
Rated crossover frequency80 MHz
BC 807-16W
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC817W, BC818W (NPN)
Type
BC 807-16W
BC 807-25W
BC 807-40W
BC 808-16W
BC 808-25W
BC 808-40W
Marking Ordering Code
5As
5Bs
5Cs
5Es
5Fs
5Gs
Q62702-C2325
Q62702-C2326
Q62702-C2327
Q62702-C2328
Q62702-C2329
Q62702-C2330
Pin Configuration
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
BC 807 W
BC 808 W
Collector-base voltage
BC 807 W
BC 808 W
Emitter-base voltage
DC collector current
Peak collector current
Base current
Total power dissipation,
T
S
= 130°C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Symbol
Values
45
25
Unit
V
V
CEO
V
CBO
50
30
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
R
thJA
R
thJS
1
5
500
1
100
250
150
- 65 ... + 150
215
80
mA
A
mA
mW
°C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
Dec-19-1996
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