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5962-9561315HYX

Description
Standard SRAM, 512KX8, 120ns, CMOS, CDIP32, CERAMIC, DIP-32
Categorystorage    storage   
File Size3MB,939 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

5962-9561315HYX Overview

Standard SRAM, 512KX8, 120ns, CMOS, CDIP32, CERAMIC, DIP-32

5962-9561315HYX Parametric

Parameter NameAttribute value
Objectid2078450941
package instructionCERAMIC, DIP-32
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time120 ns
JESD-30 codeR-CDIP-T32
length41.525 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height5.13 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
NOT MEASUREMENT
SENSITIVE
MIL-HDBK-103AP
6 MARCH 2014
SUPERSEDING
MIL-HDBK-103AN
12 SEPTEMBER 2013
DEPARTMENT OF DEFENSE
HANDBOOK
LIST OF STANDARD MICROCIRCUIT DRAWINGS
This handbook is for guidance only. Do not cite this document
as a requirement.
AMSC N/A
FSC 5962
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