MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
QM600HD-M
•
•
•
•
I
C
Collector current ........................
600A
V
CEX
Collector-emitter voltage ...........
350V
h
FE
DC current gain.............................
500
Non-Insulated Type
APPLICATION
Robotics, Forklifts, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
80
φ5.5
C
B
20
E
E
48
22
62
8
B
14
BX
12
17
E
E
BX
22
25
M4
64
M6
8
5.5
21
LABEL
25
27
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
350
350
400
10
600
—
2080
15
—
–40~+150
–40~+125
Charged part to case, AC for 1 minute
Main terminal screw M6
—
1.96~2.94
20~30
1.47~1.96
15~20
0.98~1.47
10~15
0.98~1.47
10~15
420
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
Mounting screw M5
—
Mounting torque
B(E) terminal screw M4
BX terminal screw M4
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Tj=25°C, unless otherwise noted)
Limits
Test conditions
V
CE
=350V, V
EB
=2V
V
CB
=400V, Emitter open
V
EB
=10V
I
C
=600A, I
B
=1.2A
–I
C
=600A (diode forward voltage)
I
C
=600A, V
CE
=2V
Min.
—
—
—
—
—
—
500
—
V
CC
=200V, I
C
=600A, I
B1
=2A, –I
B2
=4A
—
—
Transistor part
Diode part
Conductive grease applied
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
800
2.0
2.5
—
—
3.0
15
3.0
0.06
—
0.05
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
1000
T
j
=25°C
10
4
7
5
4
3
2
10
3
7
5
4
3
2
10
2
10
1
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
1.0A
0.4A
600
0.2A
400
0.08A
DC CURRENT GAIN h
FE
800
I
B
=2.0A
200
V
CE
=2.0V
T
j
=25°C
T
j
=125°C
0
0
1
2
3
4
5
2 3 45
710
2
2 3 4 5 7 10
3
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
0
7
5
4
3
2
10
–1
7
5
4
3
2
10
–2
1.2
1.4
1.6
1.8
2.0
2.2
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
10
1
BASE CURRENT I
B
(A)
V
CE
=2.0V
T
j
=25°C
V
BE(sat)
SATURATION VOLTAGE
V
CE(sat)
I
B
=1.2A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
2
2 3 4 5 7 10
3
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
T
j
=25°C
T
j
=125°C
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10
2
7
5
3
2
10
1
t
s
7
5
3
2
t
on
, t
s
, t
f
(µs)
4
V
CC
=200V
I
B1
=2.0A
–I
B2
=4.0A
3
I
C
=600A
2
SWITCHING TIME
t
f
1
I
C
=200A
I
C
=400A
0
10
–2
2 3 4 5 7
10
–1
2 3 4 5 7
10
0
2 3 4 5 7
10
1
10
0
T
j
=25°C
t
on
7
T
j
=125°C
5
3
2
–1
10
10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
2 3 4 5 7 10
4
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
t
s
, t
f
(µs)
t
s
10
1
7
5
4
3
2
10
0
7
5
4
3
V
CC
=200V
I
B1
=2A
I
C
=600A
T
j
=25°C
T
j
=125°C
3 4 5 7 10
0
2 3 4 5 7 10
1
2 3
REVERSE BIAS SAFE OPERATING AREA
2000
COLLECTOR CURRENT I
C
(A)
1800
1600
1400
1200
1000
800
600
400
200
0
0
100
200
300
400
500
V
CE
(V)
–I
B2
=4A
6A
T
j
=125°C
SWITCHING TIME
t
f
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
T
C
=25°C
NON–REPETITIVE
100
90
t
w
=100µs
DERATING FACTOR (%)
80
70
60
50
40
30
20
10
0
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
SECOND
BREAKDOWN
AREA
1m
s
m
10
s
COLLECTOR
DISSIPATION
10
1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 4 5 7 10
1
2 3
0.08
0.07
0.06
Z
th (j–c)
(°C/ W)
0.05
0.04
0.03
0.02
0.01
0
10
–3
2 3 4 5 710
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
TIME (s)
D
C
0
20
40
60
80 100 120 140 160
T
C
(°C)
CASE TEMPERATURE
Feb.1999
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