FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 93.9 mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 6 A |
| Maximum drain current (ID) | 8.5 A |
| Maximum drain-source on-resistance | 0.03 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| JESD-609 code | e0 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 1.1 W |
| Maximum pulsed drain current (IDM) | 34 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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