JMnic
Product Specification
Silicon PNP Power Transistors
2SB1064
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SD1505
・Low
collector saturation voltage
APPLICATIONS
・Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-50
-5
-3
-4.5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB1064
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA ,I
B
=0
-50
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-50μA ,I
E
=0
-60
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50μA ,I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=-40V; I
E
=0
-1.0
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-1.0
μA
h
FE
DC current gain
I
C
=-0.5A ; V
CE
=-3V
60
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V,f=1MHz
50
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
70
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1064
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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