PTF210901
LDMOS RF Power Field Effect Transistor
90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W
GOLDMOS
FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 1050 mA, f
1
= 2140 MHz, f
2
= 2150 MHz,
3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25
30
25
IM3
-35
20
-40
15
-45
Gain
-50
-55
39
40
41
42
43
44
ACPR
10
5
Drain Efficiency
Features
•
•
Internal matching for wideband performance
Typical two–carrier 3GPP WCDMA
performance
- Average output power = 19 W at –37 dBc
- Efficiency = 25%
Typical CW performance
- Output power at P–1dB = 105 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR at 28 V,
90 W (CW) output power
•
-30
Efficiency (%), Gain (dB)
IMD (dBc), ACPR (dBc)
•
•
•
Output Power, Avg. (dBm)
PTF210901E
Package 30248
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
RF Performance
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 19 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
—
—
—
Typ
–37
15
25
Max
—
—
—
Units
dBc
dB
%
η
D
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
Min
13.5
36
—
Typ
15
38
–30
Max
—
—
–28
Units
dB
%
dBc
2004-01-16
η
D
IMD
PTF210901
Electrical Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1050 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
3.2
0.01
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 90 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
389
2.22
–40 to +150
0.45
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance
in broadband test fixture
Broadband Circuit Performance
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 20 W CW
40
0
55
54
Power Sweep, Pulsed Conditions
V
DD
= 28 V, I
DQ
= 1050 mA, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
Gain (dB), Efficiency (%)
Input Return Loss (dB)
Output Power (dBm)
35
30
25
20
15
10
5
2080
Input Return Loss
2120
2160
Gain
Efficiency
-5
-10
-15
-20
-25
-30
-35
2200
P-3dB = 51.3 dBm
Ideal
53
52
51
50
49
48
47
46
45
30 31 32 33 34 35 36 37 38 39
40
Actual
P-1dB = 50.6 dBm
Frequency (MHz)
Input Power (dBm)
Data Sheet
2
2004-01-16
PTF210901
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
for selected currents
V
DD
= 28 V, f = 2140 MHz, tone spacing = 1 MHz
-20
-25
-30
0.75 A
-20
-25
-30
0.85 A
1.15 A
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 90 W PEP,
f = 2140 MHz
IMD (dBc)
IMD (dBc)
-35
-40
-45
-50
-55
-60
-65
37
39
0.95 A
3rd Order
-35
-40
-45
-50
5th Order
1.05 A
41
43
45
47
49
51
-55
-60
0
7th Order
10
20
30
Output Power (dBm), PEP
Tone Spacing (MHz)
Two–Tone Drive–Up
V
DD
= 28 V, I
DQ
= 1050 mA, f = 2140 MHz,
tone spacing = 1 MHz
45
40
-20
-25
IM3
Efficiency
IM5
-30
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 1050 mA, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67%
clipping, P/A R = 8.7 dB, 3.84 MHz BW
30
-30
Drain Efficiency
-35
35
30
25
20
15
10
5
0
39
41
43
45
-40
-45
-50
IM7
-55
-60
-65
47
49
51
15
Gain
10
ACPR Up
5
ACPR Low
0
34 35 36 37 38 39 40 41 42 43 44
-45
-50
-55
-60
Output Power (dBm), PEP
Output Power (dBm), Avg.
Data Sheet
3
2004-01-16
ACPR (dB)
IMD (dBc)
-35
Drain Efficiency (%),
Gain (dB)
Drain Efficiency (%)
25
20
-40
PTF210901
Typical Performance
(cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I
DQ
= 1050 mA, f = 2140 MHz, P
OUT
= 90 W PEP,
tone spacing = 1 MHz
45
40
35
Drain Efficiency
-5
-10
-15
-20
IM3
-25
-30
-35
Gain
-40
-45
-50
22
24
26
28
30
32
34
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
7.50 A
9.00 A
1.01
1.00
0.99
0.98
0.97
0.96
-20
5
30
55
80
105
6.00 A
4.50 A
3.00 A
1.50 A
30
25
20
15
10
5
0
Drain Voltage (V)
Normalized Bias Voltage
1.02
Efficiency (%),
Gain (dB)
IM3 (dBc)
Case Temperature (ºC)
Broadband Circuit Impedance Data
Z
0
= 50
Ω
0. 1
D
Z Source
Z Load
Z Load
G
0
.0
2200 MHz
0.1
S
Frequency
MHz
2070
2110
2140
2170
2200
R
5.11
4.78
4.57
4.35
4.12
Z Source
Ω
jX
–7.00
–6.74
–6.50
–6.30
–6.11
R
2.14
2.03
1.99
1.92
1.88
Z Load
Ω
jX
0.62
0.97
1.21
1.45
1.67
W
ARD
L
OA
D
-
T HS
T
O
L E
NG
VE
Z Source
0. 1
2200 MHz
2070 MHz
W
<---
A
0.
2
Data Sheet
4
2004-01-16
0.2
2070 MHz
京公网安备 11010802033920号
EEWORLD
