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PTF180601E

Description
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
CategoryDiscrete semiconductor    The transistor   
File Size223KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

PTF180601E Overview

LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz

PTF180601E Parametric

Parameter NameAttribute value
MakerInfineon
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)180 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PTF180601
LDMOS Field Effect Transistor
60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched
GOLDMOS
FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
EDGE EVM Performance
EVM & Efficiency vs. Power Output
V
DD
= 28 V, I
DQ
= 0.8 A, f = 1989.8 MHz
4
40
Features
Broadband internal matching
Typical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
EVM RMS (Average %)..
3
Efficiency
30
Efficiency (%)
2
20
1
EVM
0
35
37
39
41
43
45
10
0
PTF180601C
Package 21248
PTF180601E
Package 30248
Output Power (dBm)
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 22 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
Typ
1.7
–60
–73
16.5
32
Max
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
η
D
IMD
Min
15
30
Typ
16.5
35
–30
Max
–28
Units
dB
%
dBc
2004-05-03

PTF180601E Related Products

PTF180601E PTF180601C PTF180601
Description LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
Maker Infineon Infineon -
package instruction FLANGE MOUNT, R-CDFM-F2 FLATPACK, R-CDFP-F2 -
Contacts 2 2 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Other features HIGH RELIABILITY HIGH RELIABILITY -
Shell connection SOURCE SOURCE -
Configuration SINGLE SINGLE -
Minimum drain-source breakdown voltage 65 V 65 V -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
highest frequency band L BAND L BAND -
JESD-30 code R-CDFM-F2 R-CDFP-F2 -
JESD-609 code e3 e3 -
Number of components 1 1 -
Number of terminals 2 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 200 °C 200 °C -
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLATPACK -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 180 W 159 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal surface MATTE TIN MATTE TIN -
Terminal form FLAT FLAT -
Terminal location DUAL DUAL -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
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