PTF080451
LDMOS RF Power Field Effect Transistor
45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Features
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 22.5 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 60 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 450 mA, f = 959.8 MHz
0
Efficiency
55
50
45
40
35
400 kHz
600 kHz
30
25
20
15
10
36
38
40
42
44
46
48
50
•
Modulation Spectrum (dB)
-10
-20
-30
-40
-50
-60
-70
-80
-90
Drain Efficiency (%)
•
•
•
•
Output Power (dBm)
PTF080451E
Package 30265
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 22.5 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.0
–62
–76
18
40
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
η
D
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 45 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1 of 9
Symbol
G
ps
Min
17
40
—
Typ
18
42
–32
Max
—
—
–30
Units
dB
%
dBc
2004-06-24
η
D
IMD
PTF080451
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 450 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
3.2
—
Max
—
1.0
—
4
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
184
1.05
–40 to +150
0.95
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance
(measurements taken in production test fixture)
Modulation Spectrum
P
OUT
= 20 W, f = 959.8 MHz
2.1
-20
9
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 450 mA, f = 959.8 MHz
90
80
EVM RMS (average %)
.
EVM RMS (average %)
.
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.25
-30
-40
400 KHz
-50
-60
-70
600 KHz
-80
-90
-100
0.75
Modulation Spectrum (dBc)
EVM
8
7
6
5
4
3
2
1
0
32
34
36
38
40
42
44
46
48
Efficiency
EVM
60
50
40
30
20
10
0
0.35
0.45
0.55
0.65
Quiescent Current (A)
Output Power (dBm)
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
2 of 9
2004-06-24
Drain Efficiency (%)
70
PTF080451
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
(as measured in a broadband circuit)
= 28 V, I
DQ
= 450 mA, f
1
= 959 MHz, f
2
= 960 MHz
0
-10
-20
3rd Order
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
V
DD
= 28 V, I
DQ
= 450 mA
18
80
17
Gain
Efficiency
70
IMD (dBc)
5th
7th
Gain (dB)
-30
-40
-50
-60
-70
-80
36
38
40
42
44
46
16
60
15
Output Pow er
50
48
14
860
880
900
920
940
40
960
Output Power (dBm), PEP
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, f
1
= 959, f
2
= 960 MHz
-20
Broadband Performance
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 22.5 W
60
0
-4
Efficiency
40
Return Loss
30
-12
-8
Gain (dB), Efficiency (%)
-25
-30
50
IMD (dBc)
-35
-40
-45
-50
-55
-60
36
350 mA
450 mA
20
Gain
10
860
880
900
920
940
-16
-20
960
550 mA
38
40
42
44
46
Output Power (dBm), PEP
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
3 of 9
2004-06-24
Return Loss (dB)
Efficiency (%), P
OUT
(dBm)
PTF080451
Typical Performance
(cont.)
Power Sweep
V
DD
= 28 V, f = 960 MHz
19.5
I
DQ
= 560 mA
19.0
21
20
19
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 450 mA, f = 960 MHz
70
60
Gain
50
40
30
Efficiency
20
10
0
30
35
40
45
50
18.5
18.0
I
DQ
= 450 mA
17.5
17.0
16.5
30
34
38
42
46
50
I
DQ
= 340 mA
18
17
16
15
14
Output Power (dBm)
Output Power (dBm)
Output Power (at 1 dB Compression)
vs. Supply Voltage
I
DQ
= 450 mA, f = 960 MHz
49.5
49.0
48.5
48.0
47.5
47.0
46.5
24
26
28
30
32
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 450 mA, f = 880 MHz
56
48
ACP F
C
– 0.75 MHz
-40
-45
-50
-55
Efficiency
24
16
8
0
36
38
40
42
ACPR F
C
+ 1.98 MHz
-60
-65
-70
-75
40
32
Supply Voltage (V)
Output Power (dBm), Avg.
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
4 of 9
2004-06-24
Adj. Ch. Power Ratio (dBc)
Output Power (dBm)
Drain Efficiency (%)
Drain Efficiency (%)
Power Gain (dB)
Gain (dB)
PTF080451
Typical Performance
(cont.)
Three-Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 450 mA, f = 880 MHz
55
ACP Up
50
-41
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
0.75 A
1.50 A
2.25 A
1.01
1.00
0.99
0.98
0.97
0.96
-20
3.00 A
3.75 A
4.50 A
Adj. Ch. Power Ratio (dBc)
Normalized Bias Voltage
-44
ALT Up
ACP Low
-47
-50
-53
-56
Efficiency
-59
-62
-65
36
37
38
39
40
41
42
43
44
45
1.02
Drain Efficiency (%)
45
40
35
30
25
20
15
0
20
40
60
80
100
Output Power (dBm), PEP
Case Temperature (ºC)
Broadband Circuit Impedance
Z
0
= 50
Ω
-
W
AV
ELE
NGT
H
S T
OW
A RD
GEN
ERA
T
OR
--->
L
OA
D
-
TOW
ARD
GT
HS
L EN
D
Z Source
Z Load
G
S
Z Load
980 MHz
0
.0
0.1
0.2
Frequency
MHz
860
920
940
960
980
R
Z Source
Ω
jX
-1.70
-0.12
0.38
0.85
1.40
R
8.20
8.30
8.40
8.50
8.70
Z Load
Ω
jX
0.70
1.60
1.90
2.20
2.40
3.00
3.10
3.10
3.20
3.20
860 MHz
860 MHz
0.1
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
5 of 9
2004-06-24
W
<---
A VE
0.3
0.2
0 .1
Z Source
980 MHz
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