e
PTB 20191
12 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
Class AB Characteristics
26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP)
Internal Input Matching
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
25
Output Power (Watts)
20
15
10
201
91
LOT
COD
E
V
CC
= 26 V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
CQ
= 100 mA
f = 1.9 GHz
Input Power (Watts)
Package 20226
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage (emitter open)
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
20
50
4.0
2.8
60
0.34
–40 to +150
2.90
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20191
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to B
Breakdown Voltage E to B
DC Current Gain
Output Capacitance
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 5 mA, R
BE
= 27
Ω
I
C
= 5 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 200 mA
V
CB
= 26 V, I
E
= 0 A, f = 1 MHx
Symbol
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
C
ob
Min
50
50
4
20
—
Typ
—
—
—
—
7
Max
—
—
—
100
—
Units
Volts
Volts
Volts
—
pF
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA, f = 1.9 GHz)
Output Power at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 100 mA, f = 1.9 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA, f = 1.9 GHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 15 W(PEP), I
CQ
= 100 mA,
f
1
= 1.899 GHz, f
2
= 1.901 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA,
f = 1.9 GHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
η
C
IMD
Min
8.0
10
35
-30
Typ
10.0
12
40
-32
Max
—
—
—
—
Units
dB
Watts
%
dBc
Ψ
—
—
5:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA)
Z Source
Z Load
Frequency
GHz
1.80
1.85
1.90
R
10.0
9.1
8.1
Z Source
jX
-4.2
-3.1
-2.0
R
2.6
2.2
1.6
Z Load
jX
0.9
1.2
1.4
Z
0
= 50
Ω
2
5/19/98
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
14
12
60
50
PTB 20191
Efficiency vs. Output Power
Efficiency (%)
Gain (dB)
10
8
6
4
2
1.75
40
30
20
10
V
CC
= 26 V
I
CQ
= 100 mA
Pout = 12 W
1.8
1.85
1.9
1.95
V
CC
= 26 V
I
CQ
= 100 mA
f = 1.9 GHz
0
0
4
8
12
16
20
Frequency (GHz)
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20191 Uen Rev. C 09-28-98
3
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