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PTB 20177
150 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20177 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
26 Volt, 960 MHz Characteristics
- Output Power = 150 Watts (PEP)
- Collector Efficiency = 50 Min at 150 Watts
- IMD = -28 dBc Max at 150 Watts (PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
200
Output Power (Watts)
160
120
80
201
77
LOT
COD
E
V
CC
= 26 V
40
0
0
5
10
15
20
25
30
I
CQ
= 400 mA Total
f = 960 MHz
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
60
4.0
25.0
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20177
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 150 W, I
CQ
= 400 mA Total,
f = 960 MHz)
Gain at PEP
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
f = 960 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 150 W, I
CQ
= 400 mA Total,
f = 960 MHz)
Collector Efficiency at PEP
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
f = 960 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
f
1
= 959.9 MHz, f
2
= 960.0 MHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
f = 960 MHz—all phase angles at frequency of test)
IMD
—
-30
-28
dBc
Symbol
G
pe
Min
7.5
Typ
8.5
Max
—
Units
dB
G
pe
8
9
—
dB
η
C
50
—
—
%
η
C
35
—
—
%
Ψ
—
—
5:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 150 W, I
CQ
= 400 mA Total )
Z Source
Z Load
Frequency
MHz
925
940
960
R
4.3
4.1
3.7
Z Source
jX
-3.6
-3.6
-3.4
2
R
3.8
3.5
3.1
Z Load
jX
-1.8
-1.4
-0.9
5/19/98
e
Typical Performance
Output Power vs. Supply Voltage
180
PTB 20177
Gain vs. Frequency
(as measured in a broadband circuit)
11
Output Power (Watts)
170
160
V
CC
= 26 V
10
140
130
120
110
100
17
19
21
23
25
27
Gain (dB)
150
I
CQ
= 400 mA Total
Pout = 150 W
9
I
CQ
= 400 mA Total
Pin = 20 W
f = 960 MHz
8
7
925
930
935
940
945
950
955
960
Vcc, Supply Voltage
Frequency (MHz)
Efficiency vs. Output Power
60
50
Intermodulation Distortion vs. Power Output
-20
V
CC
= 26 V
-24
I
CQ
= 400 mA Total
f
1
= 959.90 MHz
f
2
= 960.00 MHz
Efficiency (%)
40
30
20
10
0
70
85
100
115
130
145
160
IMD (dBc)
-28
-32
-36
-40
60
70
V
CC
= 26 V
I
CQ
= 400 mA Total
f = 960 MHz
80
90
100
110
120
130
140
150
Output Power (Watts)
Output Power (Watts-PEP)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20177 Uen Rev. C 09-28-98
3
5/19/98
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