e
PTB 20134
30 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20134 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
30 Watts, 860–900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
50
Output Power (Watts)
V
CC
= 25 V
40
30
20
10
0
0
1
2
3
4
5
I
CQ
= 100 mA
f = 900 MHz
201
34
LOT
COD
E
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
8.0
80
0.45
–40 to +150
2.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20134
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA, f = 900 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA, f = 900 MHz)
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 30 W(PEP), I
CQ
= 100 mA,
f = 900 MHz,
∆f
= 1 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA,
f = 900 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
IMD
Min
8
50
—
Typ
9.5
—
-30
Max
—
—
—
Units
dB
%
dBc
Ψ
—
—
30:1
—
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13
12
80
70
Efficiency (%)
60
50
Gain (dB)
Efficiency (%)
Gain (dB)
11
10
9
8
7
850
V
CC
= 25 V
I
CQ
= 100 mA
P
OUT
= 30 W
40
30
20
910
860
870
880
890
900
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98
2
MCU
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