e
PTB 20105
20 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20105 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Class AB Characteristics
Performance at 960 MHz, 25 V
CC
- Output Power = 20 W
- Efficiency = 50% Min
Gold Metallization
Silicon Nitride Passivated
Output Power vs. Input Power
25
Output Power (Watts)
20
15
10
201
05
LOT
COD
E
V
CC
= 25 V
5
0
0
1
2
3
4
I
CQ
= 0.100 A
f = 960 MHz
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
5.0
70
0.4
–40 to +150
2.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20105
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5.0
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA, f = 960 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
Ψ
Min
9
50
—
Typ
10
—
—
Max
—
—
30:1
Units
dB
%
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA)
Z Source
Z Load
Frequency
MHz
925
942
960
R
3.1
3.0
2.9
Z Source
jX
-1.8
-1.5
-1.2
R
3.1
2.9
2.7
Z Load
jX
1.4
1.4
1.4
2
e
Typical Performance
Output Power vs. Supply Voltage
26
PTB 20105
Gain vs. Frequency
11
(as measured in a broadband circuit)
Output Power (Watts)
22
I
CQ
= 0.100 A
f = 960 MHz
Pin = 2.2 W
Gain (dB)
10
18
9
V
CC
= 25 V
8
14
I
CQ
= 0.100 A
Pout = 20 W
930
935
940
945
950
955
960
10
17
19
21
23
25
27
7
925
Vcc, Supply Voltage
Frequency (MHz)
Efficiency vs. Output Power
60
50
Efficiency (%)
40
30
20
10
0
4
8
12
16
20
24
V
CC
= 25 V
I
CQ
= 0.100 A
f = 960 MHz
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20105 Uen Rev. C 09-28-98
3
Test/Measurement
京公网安备 11010802033920号
EEWORLD
