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PTB 20079
10 Watts, 1.6–1.7 GHz
INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally-
matched, common emitter RF Power transistor intended for 26 Vdc
operation across 1.6 to 1.7 GHz frequency band. It is rated at 10
Watts minimum output power for PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
10 Watts, 1.6–1.7 GHz
Class A/AB Characteristics
38% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
16
+24V
14
+26V
+22V
Output Power (Watts)
12
10
8
6
4
2
0
0.00
2007
9
LOT
COD
E
f = 1.65 GHz
I
CQ
= 100 mA
0.50
1.00
1.50
2.00
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
1.4
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20079
Electrical Characteristics
(100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
e
Conditions
I
C
= 15 mA, R
BE
= 22
Ω
I
E
= 10 mA
I
C
= 1 A, V
CE
= 5 V
Symbol
V
(BR)CER
V
(BR)EBO
h
FE
Min
55
4.0
20
Typ
—
—
—
Max
—
—
100
Units
Vdc
Vdc
—
RF Specifications
(100% Tested)
Characteristic
Power Gain, Common-Emitter
(V
CC
= 26 Vdc, P
OUT
= 3 W, I
CQ
= 120 mA, f = 1.65 GHz)
Efficiency
(V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 120 mA, f = 1.65 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 120 mA, f = 1.65 GHz)
Symbol
G
pe
Min
10.5
37
10.0
Typ
11
40
12
Max
—
—
—
Units
dB
%
Watts
η
C
P-1dB
Impedance Data
(data shown for fixed-tuned broadband circuit)
V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 120 mA
Z Source
Z Load
Frequency
GHz
1.6
1.65
1.7
R
3.9
3.1
2.3
Z Source
jX
-4.7
-3.8
-3.7
R
6.1
6.1
6.1
Z Load
jX
-0.7
0.0
0.7
Z
0
= 50
Ω
2
5/6/98
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
PTB 20079
Power-Added Efficiency vs. Pout
Power-Added Efficiency (%)
60
50
40
30
20
10
0
13
12
+26 V
f = 1.65 GHz
I
CQ
= 100 mA
+ 26 V
+ 24 V
Gain (dB)
11
10
9
8
1.60
+24 V
+22 V
V
CC
+ 22 V
P
OUT
= 10 W
I
CQ
= 100 mA
1.62
1.64
1.66
1.68
1.70
Frequency (GHz)
0
4
8
12
16
Power Output (Watts)
Intermodulation Distortion (dB)
0
-10
3rd Order IMD vs. PEP
800 mA
-20
400 mA
I
CQ
-30
-40
-50
-60
0
5
10
15
20
200 mA
100 mA
V
CC
= 24 V
f
1
= 1650.0 MHz
f
2
= 1650.2 MHz
Output Power (PEP) (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20079 Uen Rev. C 09-28-98
3
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