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PT550F

Description
SIGNAL DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size42KB,4 Pages
ManufacturerSHARP
Websitehttp://sharp-world.com/products/device/
Environmental Compliance
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PT550F Overview

SIGNAL DIODE

PT550F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSHARP
package instructionTO-18, 3 PIN
Reach Compliance Codeunknow
Coll-Emtr Bkdn Voltage-Mi35 V
ConfigurationSINGLE
Maximum dark power1000 nA
Infrared rangeYES
JESD-609 codee3
Nominal photocurrent20 mA
Number of functions1
Maximum operating temperature125 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO DARLINGTON
peak wavelength800 nm
shapeROUND
size3 mm
Terminal surfaceTin (Sn)
PT550/PT550F
PT550/PT550F
s
Features
1. High sensitivity
PT550
I
C
: MIN.3mA at E
e
= 0.1mW/cm
2
PT550F
I
C
: MIN.3mA at E
e
= 1mW/cm
2
2. Narrow acceptance :
PT550
(
∆ θ
: TYP. ± 6˚ )
Wide acceptance :
PT550F
(
∆ θ
: TYP. ± 50˚ )
3. TO - 18 type standard package
TO-18 Type Phototransistor
with Base Terminal
s
Outline Dimensions
φ
4.7
±
0.1
6.8
MAX.
3.6
±
0.1
( Unit : mm )
φ4.7
±
0.1
φ
3.0
±
0.1
PT550F
(
(
20
±
1
4.5
PT550
20
φ
0.45
2.5
2.5
2
φ
2.5
φ
0.45
1
s
Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
0
1.
1.
0
3
3
2
φ
2.5
2 3
1.0
45
˚
φ
5.7
MAX.
1
45
˚
1.0
φ
5.7
MAX.
1
1 Collector ( Case ) 2 Base 3 Emitter
s
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Symbol
V
CEO
V
ECO
V
CBO
I
C
P
C
T
opr
T
stg
T
sol
Rating
35
6
35
100
150
- 25 to + 125
- 55 to + 150
260
( Ta = 25˚C )
Unit
V
V
V
mA
mW
˚C
˚C
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s
Electro-optical Characteristics
Parameter
*2
( Ta = 25˚C )
Conditions
PT550
PT550F
V
CE
= 5V
V
CE
= 5V
E
e
= 0.1mW/cm
2
E
e
= 1mW/cm
2
V
CE
= 10V, E
e
= 0, I
B
= 0
I
C
= 1mA, I
B
= 0 I
C
= 1mA, I
B
= 0
E
e
= 0.1mW/cm
2
E
e
= 1mW/cm
2
-
V
CC
= 15V, I
C
= 1mA, R
L
= 1kΩ
MIN.
3
-
-
-
-
-
TYP.
20
10
- 7
-
800
350
300
MAX.
PT550
142
PT550F
150
10
-6
1.0
-
-
-
Unit
mA
A
V
nm
µ
s
µ
s
Symbol
I
C
I
CEO
V
CE ( sat )
λ
P
t
r
t
f
Collector current
Collector dark current
Collecter-emitter saturation
voltage
Peak sensitivity wavelength
Response
Rise time
Fall time
time
*2 E
e
: Irradiance by CIE standard light source A ( tungsten lamp )
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

PT550F Related Products

PT550F PT550
Description SIGNAL DIODE SIGNAL DIODE
Is it Rohs certified? conform to conform to
Maker SHARP SHARP
package instruction TO-18, 3 PIN TO-18, 3 PIN
Reach Compliance Code unknow unknow
Coll-Emtr Bkdn Voltage-Mi 35 V 35 V
Configuration SINGLE SINGLE
Maximum dark power 1000 nA 1000 nA
Infrared range YES YES
JESD-609 code e3 e3
Nominal photocurrent 20 mA 20 mA
Number of functions 1 1
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -25 °C -25 °C
Optoelectronic device types PHOTO DARLINGTON PHOTO DARLINGTON
peak wavelength 800 nm 800 nm
shape ROUND ROUND
size 3 mm 4.7 mm
Terminal surface Tin (Sn) Tin (Sn)
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