DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PSS8550
PNP medium power 25 V transistor
Product specification
Supersedes data of 2002 Nov 19
2004 Aug 10
Philips Semiconductors
Product specification
PNP medium power 25 V transistor
FEATURES
•
High total power dissipation
•
High current capability.
APPLICATIONS
•
Medium power switching and muting
•
Amplification
•
Portable radio output amplifier (class-B, push-pull).
DESCRIPTION
PNP transistor in a SOT54 (TO-92) plastic package.
NPN complement: PSS8050.
handbook, halfpage
PSS8550
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
−25
−1.5
UNIT
V
A
1
MARKING
TYPE NUMBER
PSS8550C
PSS8550D
MARKING CODE
2
3
MSB033
S8550C
S8550D
Fig.1
Simplified outline (SOT54).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
T
amb
≤
25
°C;
note 3
T
stg
T
j
T
amb
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed
conditions: pulse width t
p
≤
1 s; duty cycle
δ ≤
0.75%.
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−25
−6
−1.5
−2
−300
−1
850
900
1
+150
150
+150
V
V
V
A
A
mA
A
mW
mW
W
°C
°C
°C
UNIT
2004 Aug 10
2
Philips Semiconductors
Product specification
PNP medium power 25 V transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
in free air; note 3
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
PSS8550
VALUE
147
139
125
UNIT
K/W
K/W
K/W
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Operated under pulsed conditions: pulse width t
p
≤
1 s; duty cycle
δ ≤
0.75%.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
CONDITIONS
V
CB
=
−35
V; I
E
= 0
V
CB
=
−35
V; I
E
= 0;
T
amb
= 150
°C
I
CEO
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
DC current gain
PSS8550C
PSS8550D
V
CEsat
V
BEsat
V
BEon
f
T
C
c
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−800
mA; I
B
=
−80
mA
I
C
=
−800
mA; I
B
=
−80
mA
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
=
−25
V; I
B
= 0
V
EB
=
−6
V; I
C
= 0
I
C
=
−5
mA; V
CE
=
−1
V
I
C
=
−800
mA; V
CE
=
−1
V
I
C
=
−100
mA; V
CE
=
−1
V
120
160
−
−
−
100
−
−
−
−190
−
−
−
−
200
300
−500
−1.2
−1
−
12
mV
V
V
MHz
pF
MIN.
−
−
−
−
45
40
TYP.
−
−
−
−
−
−
MAX.
−100
−50
−100
−100
−
−
UNIT
nA
µA
nA
nA
2004 Aug 10
3
Philips Semiconductors
Product specification
PNP medium power 25 V transistor
PSS8550
handbook, halfpage
400
MLD958
handbook, halfpage
−1200
VBE
(mV)
−1000
MLD959
hFE
300
(1)
(1)
−800
200
(2)
(2)
−600
(3)
100
(3)
−400
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
PSS8550C
V
CE
=
−1
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
PSS8550C
V
CE
=
−1
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
MLD960
handbook, halfpage
−1200
MLD962
VBEsat
(mV)
VCEsat
(mV)
−1000
(1)
(2)
−800
−10
2
−600
(1)
(3)
(2)
−400
(3)
−10
−10
−1
−1
−10
−10
2
−10
3
−
10
4
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
PSS8550C
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
PSS8550C
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Aug 10
4
Philips Semiconductors
Product specification
PNP medium power 25 V transistor
PSS8550
10
3
handbook, halfpage
RCEsat
(Ω)
10
2
MLD961
−2.5
handbook, halfpage
IC
(A)
−2
(3) (2)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
MLD963
−1.5
10
−1
1
(1)
(2)
(3)
−0.5
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
0
0
−0.5
−1
−1.5
VCE (V)
−2
PSS8550C
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
PSS8550C
(1) I
B
=
−100
mA.
(2) I
B
=
−90
mA.
(3) I
B
=
−80
mA.
(4) I
B
=
−70
mA.
(5) I
B
=
−60
mA.
(6) I
B
=
−50
mA.
(7) I
B
=
−40
mA.
(8) I
B
=
−30
mA.
(9) I
B
=
−20
mA.
(10) I
B
=
−10
mA.
Fig.6
Equivalent on-resistance as a function of
collector current; typical values.
Fig.7
Collector current as a function of
collector-emitter voltage; typical values.
2004 Aug 10
5
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