Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
FEATURES
•
’Trench’
technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
g
PSMN040-200W
QUICK REFERENCE DATA
d
SYMBOL
V
DSS
= 200 V
I
D
= 50 A
R
DS(ON)
≤
40 mΩ
s
GENERAL DESCRIPTION
SiliconMAX
products use the latest
Philips Trench technology to
achieve the lowest possible
on-state resistance in each
package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN040-200W is supplied in
the SOT429 (TO247) conventional
leaded package.
PINNING
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
50
36
200
300
175
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
Non-repetitive avalanche
current
CONDITIONS
Unclamped inductive load, I
AS
= 50 A;
t
p
= 100
µs;
T
j
prior to avalanche = 25˚C;
V
DD
≤
25 V; R
GS
= 50
Ω;
V
GS
= 10 V; refer
to fig:15
MIN.
-
MAX.
661
UNIT
mJ
I
AS
-
50
A
August 1999
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PSMN040-200W
TYP.
-
MAX.
0.5
-
UNIT
K/W
K/W
in free air
45
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown
voltage
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
Drain-source on-state
V
GS
= 10 V; I
D
= 25 A
resistance
Gate source leakage current V
GS
=
±10
V; V
DS
= 0 V
Zero gate voltage drain
V
DS
= 200 V; V
GS
= 0 V;
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
T
j
= 175˚C
T
j
= 175˚C
MIN.
200
178
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
3.0
-
-
35
-
2
0.05
-
183
40
73
43
94
230
92
3.5
4.5
7.5
9530
732
380
-
-
4.0
-
6
40
116
100
10
500
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
mΩ
mΩ
nA
µA
µA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
pF
pF
pF
I
D
= 50 A; V
DD
= 160 V; V
GS
= 10 V
V
DD
= 100 V; R
D
= 3.9
Ω;
V
GS
= 10 V; R
G
= 5.6
Ω
Resistive load
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 20 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 30 V
-
-
-
TYP. MAX. UNIT
-
-
0.85
160
1.4
50
200
1.2
-
-
A
A
V
ns
µC
August 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PSMN040-200W
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
1
Transient thermal impedance, Zth j-mb (K/W)
D = 0.5
0.2
0.1
0.1
0.05
0.02
P
D
D = tp/T
0.01
tp
single pulse
0.001
1E-06
1E-05
1E-04
1E-03
1E-02
T
1E-01
1E+00
Pulse width, tp (s)
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
60 Drain Current, ID (A)
55 Tj = 25 C
50
45
40
35
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VDS (V)
1.6
4.8 V
4.6 V
4.4 V
4.2 V
1.8
2
5V
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
VGS = 10V
8V
6V
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); V
GS
≥
10 V
Peak Pulsed Drain Current, IDM (A)
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
)
1000
0.2
0.18
RDS(on) = VDS/ ID
tp = 10 us
100
100 us
1 ms
D.C.
10 ms
100 ms
1
1
10
100
Drain-Source Voltage, VDS (V)
1000
0.16
0.14
0.12
0.1
10
0.08
0.06
0.04
0.02
0
Drain-Source On Resistance, RDS(on) (Ohms)
4.2 V
4.4 V
4.6 V
Tj = 25 C
4.8 V
5V
6V
VGS = 10V
0
5
10
15
20
25
Drain Current, ID (A)
30
35
40
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
)
August 1999
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PSMN040-200W
Drain current, ID (A)
60
55
50
45
40
35
30
25
20
15
10
5
0
0
VDS > ID X RDS(ON)
4.5
4
3.5
3
175 C
Threshold Voltage, VGS(TO) (V)
maximum
typical
2.5
2
Tj = 25 C
minimum
1.5
1
0.5
0
1
2
3
4
5
6
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Gate-source voltage, VGS (V)
Junction Temperature, Tj (C)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Tj = 25 C
80
70
60
50
40
30
20
10
0
0
5
10
15
20 25 30 35 40
Drain current, ID (A)
45
50
55
60
175 C
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
100
90
1.0E-01
Drain current, ID (A)
1.0E-02
minimum
typical
1.0E-04
maximum
1.0E-05
1.0E-03
1.0E-06
0
0.5
1
1.5
2
2.5
3
3.5
Gate-source voltage, VGS (V)
4
4.5
5
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C
Capacitances, Ciss, Coss, Crss (nF)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60
-40
-20
0
20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
100
Ciss
10
1
Coss
Crss
0.1
0.1
1
10
Drain-Source Voltage, VDS (V)
100
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
August 1999
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PSMN040-200W
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Gate-source voltage, VGS (V)
ID = 50 A
Tj = 25 C
VDD = 40 V
100
Maximum Avalanche Current, I
AS
(A)
25 C
VDD = 160 V
10
Tj prior to avalanche = 150 C
0
20
40
60
80
100 120 140
Gate charge, QG (nC)
160
180
200
1
0.001
0.01
0.1
Avalanche time, t
AV
(ms)
1
10
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
Source-Drain Diode Current, IF (A)
60
55
50
45
40
35
30
25
20
15
10
5
0
0
VGS = 0 V
175 C
Tj = 25 C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
August 1999
5
Rev 1.000
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