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PSMN030-150P

Description
N-channel TrenchMOS transistor
CategoryDiscrete semiconductor    The transistor   
File Size94KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PSMN030-150P Overview

N-channel TrenchMOS transistor

PSMN030-150P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)55.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
FEATURES
’Trench’
technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
g
PSMN030-150P
QUICK REFERENCE DATA
d
SYMBOL
V
DSS
= 150 V
I
D
= 55.5 A
R
DS(ON)
30 mΩ
s
GENERAL DESCRIPTION
SiliconMAX
products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN030-150P is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
150
150
±
20
55.5
39
222
250
175
UNIT
V
V
V
A
A
A
W
˚C
June 2000
1
Rev 1.000
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