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PSMN006-20K

Description
TrenchMOS ultra low level FET
CategoryDiscrete semiconductor    The transistor   
File Size79KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PSMN006-20K Overview

TrenchMOS ultra low level FET

PSMN006-20K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)32 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Humidity sensitivity level2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)8.3 W
surface mountYES
PSMN006-20K
TrenchMOS™ ultra low level FET
Rev. 01 — 30 May 2002
Product data
1. Description
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN006-20K in SOT96-1 (SO8).
2. Features
s
Very low on-state resistance
s
Very low threshold
s
TrenchMOS™ technology.
3. Applications
s
DC to DC converter
s
Computer motherboards
s
Switch mode power supplies.
4. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
8
5
d
Simplified outline
Symbol
gate (g)
drain (d)
1
Top view
4
MBK187
g
s
MBB076
SOT96-1 (SO8)
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