PD - 95283
IRF7488PbF
HEXFET
®
Power MOSFET
Applications
l
l
High frequency DC-DC converters
Lead-Free
V
DSS
80V
R
DS(on)
max
29mW@V
GS
=10V
Q
g
38nC
Benefits
S
1
8
7
A
A
D
D
D
D
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
S
S
G
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
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1
09/21/04
IRF7488PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
80
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.089
24
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
29
mΩ V
GS
= 10V, I
D
= 3.8A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 80V, V
GS
= 0V
µA
250
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
9.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
38
9.1
12
13
12
44
16
1680
270
32
1760
170
340
Max. Units
Conditions
–––
S
V
DS
= 15V, I
D
= 3.8A
57
I
D
= 3.8A
nC V
DS
= 40V
V
GS
= 10V,
–––
V
DD
= 40V
–––
I
D
= 3.8A
ns
–––
R
G
= 9.1Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 64V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
96
3.8
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
65
190
2.3
A
50
1.3
98
290
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 3.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.8A
di/dt = 100A/µs
D
S
2
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IRF7488PbF
100
TOP
V
GS
100
TOP
V
GS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
1
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
10
0.1
4.0V
1
4.0V
0.01
0.001
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.5
RDS(on) , Drain-to-Source On Resistance
ID = 6.3A
VGS = 10V
2.0
ID, Drain-to-Source Current
(Α
)
T J = 150°C
10.00
(Normalized)
1.00
1.5
T J = 25°C
0.10
1.0
0.01
4.0
5.0
VDS = 25V
20µs PULSE WIDTH
6.0
7.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7488PbF
100000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, Cds SHORTED
gs
Crss = C
gd
Coss
= Cds + Cgd
ID= 3.8A
16
10000
VDS= 64V
VDS= 40V
VDS= 16V
C, Capacitance (pF)
12
Ciss
1000
Coss
Crss
100
8
4
0
10
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J = 150°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
10msec
1.0
T J = 25°C
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7488PbF
7
6
V
DS
V
GS
R
D
ID , Drain Current (A)
5
4
R
G
10V
D.U.T.
+
-
V
DD
3
2
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
1
V
DS
0
25
50
75
100
125
150
T C , Case Temperature (°C)
90%
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response ( Z thJC )
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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