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2N5195

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size214KB,2 Pages
ManufacturerSPC Multicomp
Download Datasheet Parametric View All

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Power Bipolar Transistor,

2N5195 Parametric

Parameter NameAttribute value
MakerSPC Multicomp
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
Base Number Matches1
Bipolar Transistor
NPN
Collector
3
2
Base
1
Emitter
Description:
Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits
Maximum Ratings:
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Total Device Dissipation (T
C
= +25°C)
Derate Above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
l
C
I
B
P
D
T
J
T
stg
Rating
80
5
4
1
40
320
-65 to +150
A
W
mW/°C
°C
Unit
V
www.element14.com
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