XC2406A816UR-G
1.6GHz ON/OFF Function LNA
ETR2704-002a
■GENERAL
DESCRIPTION
The XC2406A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power
consumption using CMOS process, The XC2406 is designed for GPS band frequency (1.6GHz).
The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is greatly
reduced and there is no need to add external ON/OFF control function like LDO.
External R
BIAS
can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are
.
3.45V, 3.00V, 2.85V and 1.80V.
■APPLICATIONS
●GPS
band RF signal amplified
■FEATURES
：NF=0.96dB(TYP.)
(@ 1.575GHz)
：11.88mW
(TYP.) (V
DD
=1.80V, R
BIAS
=92Ω)
：S21=18dB(TYP.)
(@ 1.575GHz)
：CE
“H” Voltage 1.1V∼V
DD
(1.71V≦V
DD
≦3.15V)
CE “L” Voltage 0V∼0.4V
Operation Voltage Range
：1.71V∼3.63V
Output
：CMOS
Output, 50Ω Driver Built-in
Operating Temperature Range
：-
40℃∼+ 85℃
Package
：USP-8A01
Environmentally Friendly
：EU
RoHS Compliant, Pb Free
Noise Figure
Low Power Consumption
High Gain
CE Function
■TYPICAL
APPLICATION CIRCUIT
P
IN
6.2nH
R
BIAS2
RF_IN
V
SS1
10nH
V
SS2
3.9pF
CE
V
CE
R
BIAS1
V
DD
RF_OUT
P
OUT
7.5nH
V
DD
R
BIAS
C
BIAS
■TYPICAL
PERFORMANCE
CHARACTERISTICS
Power Gain / Noise Figure vs. Frequency
XC2406A816
V
DD
=V
CE
=2.85V, Ta=25℃
25
20
15
10
5
0
1
1.1 1.2
1.3 1.4 1.5 1.6 1.7
Frequency : f (GHz)
1.8
1.9
2
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
DD
[V] (TYP.)
3.45
3.00
2.85
1.80
R
BIAS
[Ω]
390
300
270
92
* R
BIAS
should be used in
±1%
tolerance and
±200ppm/℃
temperature stability.
1/18
Noise Figure : NF (dB)
TOP VIEW
Power Gain : S21 (dB)
XC2406A816UR-G
■BLOCK
DIAGRAM
* Diodes inside the circuit are an ESD protection diode.
■PRODUCT
CLASSIFICATION
●Ordering
Information
PRODUCT NAME
XC2406A816UR-G
(*1)
(*1)
PACKAGE
USP-8A01
ORDER UNIT
3,000 / Reel
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
2/18
XC2406A816UR-G
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Power Supply Voltage
CE Input Voltage
Current Circuit
R
BIAS1
Input Voltage
R
BIAS2
Input Voltage
RF Input Power
RF_IN Input Voltege
RF_OUT Input Voltege
Power Dissipation
Operating Ambient Temperature
Storage Temperature
SYMBOL
V
DD
V
CE
I
DD
R
BIAS1
R
BIAS2
P
IN
V
RF_IN
V
RF_OUT
Pd
Topr
Tstg
RATINGS
-0.3½4.0
-0.3½V
DD
+0.3 or 4.0
(*1)
42
-0.3½V
DD
+0.3 or 4.0
(*1)
-0.3½+1.6
10
-0.3½R
BIAS2
+0.3 or +1.6
-0.3½R
BIAS2
+0.3 or +1.6
120
-40½+85
-55½+125
(*2)
(*2)
Ta=25℃
UNITS
V
V
mA
V
V
dBm
V
V
mW
℃
℃
* All voltages are described based on the V
SS1
and V
SS2
pin.
V
SS1
pin and V
SS2
pin should be connected each other outside.
(*1)
The maximum value should be either V
DD
+0.3V or +4.0V in the lowest.
(*2)
The maximum value should be either R
BIAS2
+0.3V or +1.6V in the lowest.
4/18
XC2406A816UR-G
■ELECTRICAL
CHARACTERISTICS
●DC
Characteristics
PARAMETER
SYMBOL
CONDITIONS
R
BIAS
=390Ω
(*2)
Power Supply Voltage
V
DD
R
BIAS
=300Ω
(*2)
R
BIAS
=270Ω
(*2)
R
BIAS
=92Ω
(*2)
Current Circuit
Stand-by Current
CE "H" Level Voltage
CE "L" Level Voltage
(*1)
(*2)
Ta=25℃
MIN.
3.278
2.850
2.708
1.710
(*1)
TYP.
3.450
3.000
2.850
1.800
6.6
-
-
-
-
MAX.
3.630
3.150
2.992
1.890
8.9
0.1
V
DD
V
DD
0.4
UNITS
V
V
V
V
mA
μA
V
V
V
CIRCUIT
①
①
①
①
①
①
①
①
①
I
DD
I
STBY
V
CEH
V
CEL
1.71V≦V
DD
≦3.63V
V
CE
=V
DD
1.71V≦V
DD
≦3.63V
(*1)
V
CE
=0V
1.71V≦V
DD
≦3.15V
3.15V<V
DD
≦3.63V
-
-
-
1.1
1.3
0
For the relation of V
DD
and R
BIAS
, Please refer to the “Power Supply Voltage vs. R
BIAS
Table” below.
R
BIAS
should be used in
±1%
tolerance and
±200ppm/℃
temperature stability.
●AC
Characteristics
PARAMETER
Power Gain
Input Return Loss
Output Return Loss
Isolation
Noise Figure
(*1)
Input Power IP3
Input Power IP2
Input Power @ 1dB
Gain Conpression
(*1)
V
DD
=V
CE
=2.85V, R
BIAS
=270Ω, Ta=25℃
SYMBOL
S21
S11
S22
S12
NF
I
IP3
I
IP2
P1dB
CONDITIONS
f=1.575 GHz
f=1.575GHz
f=1.575GHz
f=1.575GHz
f=1.575GHz
f=1.575GHz, 1.576GHz
f=0.8GHz, 2.375GHz
f=1.575GHz
MIN.
15.0
-
-
-
-
-
-
-
TYP.
18.0
7.5
13
-33
0.96
-20
12.2
-28.0
MAX.
-
-
-
-
-
-
-
-
UNITS
dB
dB
dB
dB
dB
dBm
dBm
dBm
CIRCUIT
②
②
②
②
③
④
④
②
NF is the value excluding the substrate loss.
Power Supply Voltage vs. R
BIAS
V
DD
[V]
3.278½3.630
2.850½3.150
2.708½2.992
1.710½1.890
R
BIAS
[Ω]
390
300
270
92
5/18
stm32/stm8
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