HM62W1664HB Series
1 M High Speed SRAM (64-kword
×
16-bit)
ADE-203-415B (Z)
Rev. 2.0
Nov. 1997
Description
The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword
×
16-bit. It realize
high speed access time (25/30 ns) with employing 0.8
µm
CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM62W1664HB is
packaged in 400-mil 44-pin SOJ for high density surface mounting.
Features
•
Single 3.3 V supply (3.3 V
±
0.3V)
•
Access time: 25/30 ns (max)
•
Completely static memory
No clock or timing strobe required
•
Equal access and cycle times
•
Directly LV-TTL compatible
All inputs and outputs
•
400-mil 44-pin SOJ package
•
Center V
CC
and V
SS
type pinout
Ordering Information
Type No.
HM62W1664HBJP-25
HM62W1664HBJP-30
HM62W1664HBLJP-25
HM62W1664HBLJP-30
Access time
25 ns
30 ns
25 ns
30 ns
Package
400-mil 44-pin plastic SOJ (CP-44D)
HM62W1664HB Series
Pin Arrangement
HM62W1664HBJP/HBLJP Series
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
V
CC
V
SS
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
V
SS
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
(Top View)
Pin Description
Pin name
A0 – A15
I/O1 – I/O16
CS
OE
WE
UB
LB
V
CC
V
SS
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Upper byte select
Lower byte select
Power supply
Ground
No connection
2
HM62W1664HB Series
Block Diagram
(LSB)
A3
A2
A1
A0
A7
A6
A5
A4
(MSB)
V
CC
Row
decoder
Memory matrix
256 rows
×
256 columns
×
16 bit
(1,048,576 bits)
V
SS
CS
I/O1
.
.
.
I/O8
I/O9
.
.
.
I/O16
WE
CS
LB
UB
Column I/O
Input
data
control
Column decoder
CS
(LSB) A12 A11 A10 A15 A14 A13 A9 A8 (MSB)
OE
CS
Function Table
CS
H
L
L
L
L
L
L
L
L
L
Note:
OE
×
H
L
L
L
L
×
×
×
×
WE
×
H
H
H
H
H
L
L
L
L
×:
H or L
LB
×
×
L
L
H
H
L
L
H
H
UB
×
×
L
H
L
H
L
H
L
H
Mode
Standby
Output disable
Read
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Lower byte read I
CC
Upper byte read I
CC
—
Write
I
CC
I
CC
Lower byte write I
CC
Upper byte write I
CC
—
I
CC
3
HM62W1664HB Series
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. V
T
(min) = –2.5 V for pulse width (under shoot)
≤
10 ns
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
*
2
V
SS
*
3
Input voltage
V
IH
V
IL
Min
3.0
0
2.0
–0.3*
1
Typ
3.3
0
—
—
Max
3.6
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
Notes: 1. –2.0 V for pulse width (under shoot)
≤
10 ns
2. The supply voltage with all V
CC
pins must be on the same level.
3. The supply voltage with all V
SS
pins must be on the same level.
4
HM62W1664HB Series
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Parameter
Input leakage current
Output leakage
current*
1
Operating power
supply current
Symbol Min
|I
LI
|
|I
LO
|
25 ns cycle I
CC
30 ns cycle I
CC
Standby power supply
current
25 ns cycle I
SB
30 ns cycle I
SB
I
SB1
—
—
—
—
—
—
—
Typ*
1
—
—
—
—
—
—
—
Max
2
2
100
90
40
35
1
mA
V
CC
≥
CS
≥
V
CC
– 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
mA
CS
= V
IH
,
Other inputs = V
IH
/V
IL
Unit Test conditions
µA
µA
mA
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
CS
= V
IL
, Iout = 0 mA
Other inputs = V
IH
/V
IL
—*
2
Output voltage
V
OL
—
—
V
OH
Note:
—*
2
—
—
0.15*
2
0.2
0.4
—
—
V
V
V
V
I
OL
= 0.1 mA
I
OL
= 2 mA
I
OH
= –0.1 mA
I
OH
= –2 mA
V
CC
– 0.2 —
2.4
—
1. Typical values are at V
CC
= 3.3 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance
(Ta = 25°C, f = 1.0 MHz)
Parameter
Input capacitance*
1
Input/output capacitance*
1
Note:
Symbol
Cin
C
I/O
Min
—
—
Typ
—
—
Max
6
8
Unit
pF
pF
Test conditions
Vin = 0 V
V
I/O
= 0 V
1. This parameter is sampled and not 100% tested.
5
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