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BTS131

Description
25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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BTS131 Overview

25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

BTS131 Parametric

Parameter NameAttribute value
MakerRochester Electronics
Reach Compliance Codeunknown
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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