3SK194
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK194
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
15
±10
±10
35
150
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
2
3SK194
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
Min
15
±10
±10
—
—
—
—
0
17
—
—
—
12
—
—
27
—
Typ
—
—
—
—
—
—
—
—
—
2.8
1.8
0.02
15
3.0
3.0
30
1.0
Max
—
—
—
±100
±100
–1.0
–1.5
10
—
3.5
2.5
—
—
4.5
4.0
—
2.5
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
dB
dB
dB
V
DD
= 12 V, V
AGC
= 10.5 V,
f = 60 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 200 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 900 MHz
Test conditions
I
D
= 200
µA,
V
G1S
= V
G2S
= –5 V
I
G1
=
±10 µA,
V
G2S
= V
DS
= 0
I
G2
=
±10 µA,
V
G1S
= V
DS
= 0
V
G1S
=
±8
V, V
G2S
= V
DS
= 0
V
G2S
=
±8
V, V
G1S
= V
DS
= 0
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100
µA
V
DS
= 6 V, V
G1S
= 0, V
G2S
= 3 V
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 MHz
Gate 1 to source cutoff voltage V
G1S(off)
Gate 2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Noise figure
Power gain
Noise figure
Note: Marking is “IY–”.
I
DSS
|y
fs
|
Ciss
Coss
Crss
PG
NF
NF
PG
NF
3
3SK194
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation P
ch
(mW)
300
20
0.8
0.6
Drain Current I
D
(mA)
16
0.4
Typical Output Characteristics
V
G2S
= 3 V
200
12
8
0.2
V
G1S
= 0
100
4
0
50
100
150
Ambient Temperature Ta (°C)
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate 1 to
Source Voltage
20
2 1.5
1
Drain Current vs. Gate 2 to
Source Voltage
20
1.5
Drain Current I
D
(mA)
16
0.5
12
1
V
DS
= 6 V
V
DS
= 6 V
Drain Current I
D
(mA)
16
12
0.5
8
V
G2S
= 0 V
8
V
G1S
= 0 V
4
4
0
–1
0
1
2
3
4
Gate 1 to Source Voltage V
G1S
(V)
0
–1
0
1
2
3
4
Gate 2 to Source Voltage V
G2S
(V)
4
3SK194
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
Forward Transfer Admittance
y
fs
(mS)
30
V
DS
= 6 V
f = 1 kHz
Power Gain PG (dB)
50
Power Gain vs. Drain Current
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
24
40
18
3
12
2.5
6
2
1.5
1
0.5
30
20
10
V
G
2S
=0
V
0
–1
0
1
2
3
4
Gate 1 to Source Voltage V
G1S
(V)
Power Gain vs. Drain Current
0
4
8
12
16
Drain Current I
D
(mA)
20
Power Gain vs. Drain to Source Voltage
50
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
20
Power Gain PG (dB)
12
Power Gain PG (dB)
V
DS
= 6 V
V
G2S
= 3 V
f = 900 MHz
4
8
12
16
Drain Current I
D
(mA)
20
16
40
30
8
20
4
10
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
5
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