JANTXV2N6792 datasheet, PDF - EEWORLD Datasheet

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JANTXV2N6792: DescriptionPower Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size597KB，3 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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JANTXV2N6792 Overview

Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

JANTXV2N6792 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	0.242 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	1.9 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
Guideline	MIL-19500
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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SCF2N6792T2

JANTX2N6792

JANTXV2N6792

REF: MIL-PRF-19500/555

POWER MOSFET

FOR RUGGED ENVIRONMENTS

TO-205AF / TO-39



DESCRIPTION

N-Channel

400 Volt

< 1.8 Ohms

2 Amp

SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabil-

ity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

used for ground based telecommunications, vehicles, ships, weapon systems and other application where fail-

ure is not an option.

FEATURES



Available in JANTX and JANTXV equivalent levels

RDS

(ON)

< 1800 mΩ

Simple Drive Requirements

Low Gate Charge



Ease of Paralleling

Hermetically Sealed

Die Available

ABSOLUTE MAXIMUM RATINGS

PARAMETER

l

D

@ V

GS

= 10 V, T

C

= 25° C

l

D

@ V

GS

= 10 V, T

C

= 100° C

IDM

PD@ TC = 25° C

Continuous Drain Current

Pulsed Drain Current

(1)

Max Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

TJ

TSTG

Gate to Source Voltage

Single Pulse Avalanche Energy

(2)

Avalanche Current

(1)

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

2.0

1.25

10

20

0.16

±20

0.242

2.2

-55 to 150

300

O.98 typical

W

W/°C

V

mJ

A

°C

g

A

UNITS

333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900

www.semicoa.com

sales@semicoa.com

Rev. 1

JANTXV2N6792 Related Products

	JANTXV2N6792	JANTX2N6792	SCF2N6792T2
Description	Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknown	unknow
Avalanche Energy Efficiency Rating (Eas)	0.242 mJ	0.242 mJ	0.242 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	400 V	400 V
Maximum drain current (ID)	2 A	2 A	2 A
Maximum drain-source on-resistance	1.9 Ω	1.9 Ω	1.9 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	10 A	10 A	10 A
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Certification status	Not Qualified	Not Qualified	-
Guideline	MIL-19500	MIL-19500	-
Base Number Matches	1	1	-

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