K4F64162D-TP50 datasheet, PDF - EEWORLD Datasheet

K4F64162D-TP50: DescriptionFast Page DRAM, 4MX16, 50ns, CMOS, PDSO50; Categorystorage storage; File Size354KB，35 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4F64162D-TP50 Overview

Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1155474520
package instruction	TSOP, TSOP50,.46,32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	50 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G50
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	FAST PAGE DRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	50
word count	4194304 words
character code	4000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.0002 A
Maximum slew rate	0.12 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

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