2.0 GENERAL DESCRIPTION ......................................................................................................................................... 5
6.0 ORDERING INFORMATION ...................................................................................................................................... 8
9.13 Program ................................................................................................................................................................. 18
9.14 Accelerated Program ............................................................................................................................................. 18
10.0 FLASH MEMORY STATUS FLAGS ......................................................................................................................... 22
11.0 Deep Power Down .................................................................................................................................................... 24
12.0 Common Flash Memory Interface............................................................................................................................. 25
13.0 ABSOLUTE MAXIMUM RATINGS ........................................................................................................................... 27
15.0 DC CHARACTERISTICS .......................................................................................................................................... 28
17.0 CAPACITANCE(TA = 25 °C, VCC = 1.8V, f = 1.0MHz)............................................................................................ 29
18.0 AC TEST CONDITION.............................................................................................................................................. 30
19.0 AC CHARACTERISTICS .......................................................................................................................................... 30
20.0 Crossing of First Word Boundary in Burst Read Mode ............................................................................................. 45
-4-
K8S1215E(T/B/Z)C
datasheet
Rev. 1.1
NOR FLASH MEMORY
512M Bit (32M x16) Muxed Burst / Multi Bank SLC NOR Flash Memory
1.0 FEATURES
•
Single Voltage, 1.7V to 1.95V for Read and Write operations
•
Organization
- 33,554,432 x 16 bit (Word Mode Only)
•
Multiplexed Data and Address for reduction of interconnections
Of course, the semiconductor switch matrix [1] host is not the only factor that determines system throughput, nor is it necessarily the dominant factor. Since measurement time is very important when a...
Could you please tell me what is the purpose of connecting a resistor and a 0.47u capacitor in series to the lower three bits of the PB port and the PC1, PC2, and PC3 ports on the demo board?...
[i=s]This post was last edited by paulhyde on 2014-9-15 09:21[/i]I see that everyone has basically achieved some results. Maybe our teacher wants to innovate this year and not play the control type. A...
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