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VR-60SSV4

Description
Stabistor Diode, Silicon,
CategoryDiscrete semiconductor    diode   
File Size18KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

VR-60SSV4 Overview

Stabistor Diode, Silicon,

VR-60SSV4 Parametric

Parameter NameAttribute value
Objectid1504401063
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL3
Other featuresUL FLAMMABILITY
Shell connectionISOLATED
Configuration1 BANK, COMMON BIPOLAR TERMINAL, 2 ELEMENTS
Diode component materialsSILICON
Diode typeSTABISTOR DIODE
JESD-30 codeO-PALF-W2
Number of components2
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Symmetrical type Silicon Varistors
Absolute Maximum Ratings
Parameter
Type No.
I
F
(mA)
I
FSM
(A)
50Hz
1cycle Sinewave
Tj
(°C)
Tstg
(°C)
V
F
(V)
I
F
(mA)
DC characteristics
I
F
(µA)
Others
Rth (j- )
(V)
(°C/ W)
Mass
Fig.
(g)
max
20
VR-60SS
VR-61SS
400
15
–40 to +100
1.5max
2.3±0.25
1A
1
0.2
20
0.3
A
150
7.5
2.75±0.25
3.1±0.25
10
70
Applications: Divided voltage stabilization circuit, Signal limiter circuit,
Temperature detection circuit, Zener voltage stabilization circuit,
Meter protection circuit, etc.
V
F
(mV/ºC)
VR-60SS, 61SS
4
V
F
—I
F
Characteristics
(Typical)
12
10
8
6
4
2
0
0.5
V
F
—I
F
Characteristics
(Typical)
Percentage against DC current (%)
100
I
F
(%)—Ta Characteristics
V
F
(A)
80
SS
-61
VR
Forward voltage variation per ºC
3
Forward voltage
VR-
61
SS
60
2
40
1
VR-60SS
VR-60SS
20
0
0.01
0.1
1
10
100
Forward current I
F
(mA)
1000
1
5
10
Forward current
50
I
F
(mA)
100
0
0
20
40
60
Ambient tamperature
80
100
Ta (°C)
Type No.
VR-60SS
Orange
VR-61SS
Orange
Red
Color indication
Internal junction
External Dimensions
(Unit: mm)
Resin molded type
Flammability:
UL94V-0 or Equivalent
Fig.
A
0.6
62.3
±1.0
5.0
±0.2
2.7
±0.2
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