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KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
•
•
•
•
•
•
•
•
•
Precision Fixed Operating Frequency (100/67/50kHz)
Low Start-up Current(Typ. 100uA)
Pulse by Pulse Current Limiting
Over Current Protection
Over Voltage Protection (Min. 25V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
1
1. GND 2. Drain 3. V
CC
4. FB
Internal Block Diagram
#3 V
CC
32V
5V
Vref
Good
logic
OSC
9V
5μA
1mA
2.5R
1R
+
7.5V
−
+
27V
−
Thermal S/D
OVER VOLTAGE S/D
−
+
S
R
L.E.B
0.1V
S
R
Q
Q
Internal
bias
#2 DRAIN
SFET
#4 FB
#1 GND
Power on reset
Rev.1.0.7
©2003 Fairchild Semiconductor Corporation
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Single Pulsed Avalanche Energy
(2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Single Pulsed Avalanche Energy
(2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
DGR
V
GS
I
DM
I
D
I
D
E
AS
V
CC,MAX
V
FB
P
D
Derating
T
J
T
A
T
STG
800
±30
12.0
3.0
2.1
95
30
-0.3 to V
SD
75
0.6
+150
-40 to +85
-55 to +150
V
V
A
DC
A
DC
A
DC
mJ
V
V
W
W/°C
°C
°C
°C
V
DGR
V
GS
I
DM
I
D
I
D
E
AS
V
CC,MAX
V
FB
P
D
Derating
T
J
T
A
T
STG
650
±30
12.0
3.0
2.4
358
30
-0.3 to V
SD
75
0.6
+150
-40 to +85
-55 to +150
V
V
A
DC
A
DC
A
DC
mJ
V
V
W
W/°C
°C
°C
°C
Symbol
Value
Unit
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13μH, starting Tj = 25°C
2
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Note:
1.
Pulse test: Pulse width
≤
300μS, duty
≤
2%
1
2.
-
S
= ---
R
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
V
GS
=0V, I
D
=50μA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is essentially
independent of
operating temperature)
V
GS
=0V, I
D
=50μA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is
essentially independent of
operating temperature)
Min.
650
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
800
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
3.6
-
720
40
40
150
100
150
42
-
7.3
13.3
-
-
-
4.0
2.5
779
75.6
24.9
40
95
150
60
-
7.2
12.1
Max.
-
50
200
4.5
-
-
-
-
-
-
-
-
34
-
-
-
250
1000
5.0
-
-
-
-
-
-
-
-
34
-
-
Unit
V
μA
μA
Ω
S
pF
nS
nC
V
μA
μA
Ω
S
pF
nS
nC
3
KA5X03XX-SERIES
Electrical Characteristics (Control Part)
(Continued)
(Ta = 25°C unless otherwise specified)
Characteristic
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Accuracy
Initial Accuracy
Initial Accuracy
Frequency Change With Temperature
(2)
Maximum Duty Cycle
F
OSC
F
OSC
F
OSC
-
Dmax
KA5H0365R
KA5H0380R
KA5M0365R
KA5M0380R
KA5L0365R
KA5L0380R
-25°C≤Ta≤+85°C
KA5H0365R
KA5H0380R
KA5M0365R
KA5M0380R
KA5L0365R
KA5L0380R
Ta=25°C, 0V<Vfb<3V
Vfb>6.5V
Ta=25°C, 5V≤Vfb≤V
SD
Ta=25°C
-25°C≤Ta≤+85°C
Max. inductor current
V
CC
>24V
-
V
CC
=14V
V
CC
<28
90
61
45
-
62
100
67
50
±5
67
110
73
55
±10
72
kHz
kHz
kHz
%
%
V
START
V
STOP
V
FB
=GND
V
FB
=GND
14
8.4
15
9
16
9.6
V
V
Symbol
Test condition
Min.
Typ.
Max.
Unit
Maximum Duty Cycle
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Peak Current Limit
PROTECTION SECTION
Over Voltage Protection
Thermal Shutdown Temperature (Tj)
(1)
TOTAL STANDBY CURRENT SECTION
Start-up Current
Operating Supply Current
(Control Part Only)
Dmax
72
77
82
%
I
FB
V
SD
Idelay
Vref
Vref/ΔT
I
OVER
V
OVP
T
SD
I
START
I
OP
0.7
6.9
4
4.80
-
1.89
25
140
-
-
0.9
7.5
5
5.00
0.3
2.15
27
160
100
7
1.1
8.1
6
5.20
0.6
2.41
29
-
170
12
mA
V
μA
V
mV/°C
A
V
°C
μA
mA
CURRENT LIMIT(SELF-PROTECTION)SECTION
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
4
KA5X03XX-SERIES
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
10
10
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
1
1
150
o
C
@Notes:
1. 300
μ
s Pulse Test
2. T
C
= 25
o
C
0.1
25
o
C
-25
o
C
@Notes:
1. V
DS
= 30V
2. 300
μ
s Pulse Test
1
10
0.1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
7
6
R
DS(on)
, [Ω ]
Drain-Source On-Resistance
5
4
Vgs=10V
I
DR
, Reverse Drain Current [A]
1
Vgs=20V
3
2
1
0
0.1
150
o
C
25
o
C
@Notes :
1. VGS = 0 V
2. 300
μ
s Pulse Test
@ Note : Tj=25
℃
0.01
0
1
I
D
,Drain Current [A]
2
3
4
5
0.4
0.6
0.8
1.0
1.2
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
700
600
500
V
GS
,Gate-Source Voltage[V]
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
10
V
DS
=130V
8
V
DS
=320V
V
DS
=520V
6
Capacitance [pF]
400
300
200
4
C
oss
100
2
@ Note : I
D
=3.0A
C
rss
0
10
0
10
1
0
0
5
10
15
20
25
V
DS
, Drain-Source Voltage [V]
Q
G
,Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
5
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