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5962-9232404MYC

Description
Non-Volatile SRAM, 8KX8, 55ns, CMOS, CQCC28, CERAMIC, LCC-28
Categorystorage    storage   
File Size67KB,9 Pages
ManufacturerDefense Logistics Agency
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5962-9232404MYC Overview

Non-Volatile SRAM, 8KX8, 55ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-9232404MYC Parametric

Parameter NameAttribute value
Parts packaging codeQLCC
package instructionQCCN,
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time55 ns
Other featuresSOFTWARE STORE/RECALL
JESD-30 codeR-CQCC-N28
JESD-609 codee4
length13.97 mm
memory density65536 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height2.29 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width8.89 mm
Base Number Matches1
STK11C68-M
STK11C68-M
CMOS nvSRAM
High Performance
8K x 8 Nonvolatile Static RAM
MIL-STD-883/SMD # 5962-92324
FEATURES
35, 45 and 55ns Access Times
15, 20 and 25ns Output Enable Access
Unlimited Read and Write to
SRAM
Software
STORE
Initiation
Automatic
STORE
Timing
100,000
STORE
cycles to
EEPROM
10 year data retention in
EEPROM
Automatic
RECALL
on Power Up
Software
RECALL
Initiation
Unlimited
RECALL
cycles from
EEPROM
Single 5V±10% Operation
Available in multiple standard packages
DESCRIPTION
The Simtek STK11C68-M is a fast static
RAM
(35, 45
and 55ns), with a nonvolatile electrically-erasable
PROM
(
EEPROM
) element incorporated in each static memory
cell. The
SRAM
can be read and written an unlimited
number of times, while independent nonvolatile data
resides in
EEPROM
. Data transfers from the
SRAM
to
the
EEPROM
(
STORE
), or from the
EEPROM
to the
SRAM
(
RECALL
) are initiated through software se-
quences. It combines the high performance and ease
of use of a fast
SRAM
with nonvolatile data integrity.
The STK11C68-M is pin compatible with industry stan-
dard
SRAM
s and is available in a 28-pin 300 mil
ceramic DIP or 28-pad LCC package. Commercial and
industrial devices are also available.
LOGIC BLOCK DIAGRAM
EEPROM ARRAY
256 x 256
A
3
A
4
ROW DECODER
PIN CONFIGURATIONS
A
7
A
12
Vcc
NC
W
NC
NC
A
8
A
9
A
11
G
A
10
E
DQ
7
DQ
6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
3
2
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A
0
A
12
4
5
6
7
8
9
10
11
12
1
28 27
26
25
24
23
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
V
CC
W
NC
A
8
A
9
A
11
G
A
10
E
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
STORE
STATIC RAM
ARRAY
256 x 256
RECALL
A
5
A
6
A
7
A
8
A
9
A
12
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
TOP VIEW
22
21
20
19
18
DQ
0
DQ
1
13 14 15 16 17
DQ
2
Vss
DQ
3
DQ
4
STORE/
RECALL
CONTROL
28 - LCC
DQ
5
28 - 300 C-DIP
COLUMN I/O
INPUT BUFFERS
PIN NAMES
A
0
- A
12
W
DQ
0
- DQ
7
E
Address Inputs
Write Enable
Data In/Out
Chip Enable
Output Enable
Power (+5V)
Ground
COLUMN DECODER
A
0
A
1
A
2
A
10
A
11
G
G
V
CC
V
SS
E
W
3-19

5962-9232404MYC Related Products

5962-9232404MYC 5962-9232406MYC 5962-9232405MYC
Description Non-Volatile SRAM, 8KX8, 55ns, CMOS, CQCC28, CERAMIC, LCC-28 Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28
Parts packaging code QLCC QLCC QLCC
package instruction QCCN, QCCN, QCCN,
Contacts 28 28 28
Reach Compliance Code unknown unknown unknown
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 55 ns 35 ns 45 ns
Other features SOFTWARE STORE/RECALL SOFTWARE STORE/RECALL SOFTWARE STORE/RECALL
JESD-30 code R-CQCC-N28 R-CQCC-N28 R-CQCC-N28
JESD-609 code e4 e4 e4
length 13.97 mm 13.97 mm 13.97 mm
memory density 65536 bit 65536 bit 65536 bit
Memory IC Type NON-VOLATILE SRAM NON-VOLATILE SRAM NON-VOLATILE SRAM
memory width 8 8 8
Humidity sensitivity level 3 3 3
Number of functions 1 1 1
Number of terminals 28 28 28
word count 8192 words 8192 words 8192 words
character code 8000 8000 8000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 8KX8 8KX8 8KX8
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code QCCN QCCN QCCN
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 240 240 240
Certification status Not Qualified Not Qualified Not Qualified
Filter level MIL-STD-883 MIL-STD-883 MIL-STD-883
Maximum seat height 2.29 mm 2.29 mm 2.29 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal surface GOLD GOLD GOLD
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location QUAD QUAD QUAD
Maximum time at peak reflow temperature 30 30 30
width 8.89 mm 8.89 mm 8.89 mm
Base Number Matches 1 1 -
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