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KBPC808G

Description
Bridge Rectifier Diode, 1 Phase, 8A, Silicon
CategoryDiscrete semiconductor    diode   
File Size941KB,6 Pages
ManufacturerHo Chien Electronics Group Inc
Download Datasheet Parametric View All

KBPC808G Overview

Bridge Rectifier Diode, 1 Phase, 8A, Silicon

KBPC808G Parametric

Parameter NameAttribute value
MakerHo Chien Electronics Group Inc
package instructionS-PUFM-W4
Reach Compliance Codeunknown
Is SamacsysN
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-W4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationUPPER
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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