FS50KMJ-03F datasheet, PDF - EEWORLD Datasheet

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FS50KMJ-03F: DescriptionPower Field-Effect Transistor, 50A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size25KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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FS50KMJ-03F Overview

Power Field-Effect Transistor, 50A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

FS50KMJ-03F Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	TO-220FN
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.019 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MITSUBISHI Nch POWER MOSFET

FS50KMJ-03F

HIGH-SPEED SWITCHING USE

FS50KMJ-03F

OUTLINE DRAWING

0.3

Dimensions in mm

2.8

0.2

0.3

3.2

0.2

0.5

3.6

0.3

1.1

0.2

1.1

0.2

0.75

0.15

6.5

0.3

0.75

0.15

2.54

0.25

2.54

0.25

➀➁➂

➁

2.6

0.2

¡4V

DRIVE

¡V

DSS ..................................................................................

30V

¡r

DS (ON) (MAX) ..........................................................

12.2mΩ

¡I

D .........................................................................................

50A

¡Integrated

Fast Recovery Diode (TYP.)

.............

50ns

➀

GATE

➁

DRAIN

➂

SOURCE

➂

TO-220FN

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS

Symbol

DSS

GSS

stg

iso

—

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

Weight

= 0V

Conditions

Ratings

±20

200

–55 ~ +150

2000

2.0

4.5

0.2

Unit

°C

Mar. 2002

L = 6µH

AC for 1 minute, Terminal to case

Typical value

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Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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