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5962-8959818QZA

Description
Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, DFP-32
Categorystorage    storage   
File Size730KB,15 Pages
Manufacturere2v technologies
Download Datasheet Parametric Compare View All

5962-8959818QZA Overview

Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, DFP-32

5962-8959818QZA Parametric

Parameter NameAttribute value
Parts packaging codeDFP
package instructionDFP,
Contacts32
Reach Compliance Codeunknow
ECCN code3A001.A.2.C
Maximum access time45 ns
JESD-30 codeR-XDFP-F32
JESD-609 codee0
length20.825 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialUNSPECIFIED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class Q
Maximum seat height2.72 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width10.415 mm
Base Number Matches1
Features
Operating Voltage: 5V
Access Time: 30, 45 ns
Very Low Power Consumption
– Active: 250 mW (Typ)
– Standby: 1 µW (Typ)
– Data Retention: 0.5 µW (Typ)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
Single 5V Supply
Equal Cycle and Access Time
Gated Inputs:
– No Pull-up/down
– Resistors Are Required
QML Q and V with SMD 5962-89598
Rad. Tolerant
128K x 8
Very Low Power
5V CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. 4151H–AERO–06/03
1

5962-8959818QZA Related Products

5962-8959818QZA 5962-8959818VZA
Description Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, DFP-32 Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, DIP-32
Parts packaging code DFP DIP
package instruction DFP, DIP,
Contacts 32 32
Reach Compliance Code unknow unknown
ECCN code 3A001.A.2.C 3A001.A.2.C
Maximum access time 45 ns 45 ns
JESD-30 code R-XDFP-F32 R-CDIP-T32
JESD-609 code e0 e0
length 20.825 mm 40.64 mm
memory density 1048576 bi 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
memory width 8 8
Number of functions 1 1
Number of terminals 32 32
word count 131072 words 131072 words
character code 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
organize 128KX8 128KX8
Package body material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
encapsulated code DFP DIP
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK IN-LINE
Parallel/Serial PARALLEL PARALLEL
Certification status Not Qualified Not Qualified
Filter level MIL-PRF-38535 Class Q MIL-PRF-38535 Class V
Maximum seat height 2.72 mm 4.32 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount YES NO
technology CMOS CMOS
Temperature level MILITARY MILITARY
Terminal surface TIN LEAD TIN LEAD
Terminal form FLAT THROUGH-HOLE
Terminal pitch 1.27 mm 2.54 mm
Terminal location DUAL DUAL
width 10.415 mm 10.16 mm
Base Number Matches 1 1

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