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113254515

Description
Photovoltaic Cell For Infrared Detection, 0.25V,
CategoryLED optoelectronic/LED    photoelectric   
File Size56KB,1 Pages
ManufacturerExcelitas
Download Datasheet Parametric Compare View All

113254515 Overview

Photovoltaic Cell For Infrared Detection, 0.25V,

113254515 Parametric

Parameter NameAttribute value
MakerExcelitas
Reach Compliance Codeunknown
Effective area85 sq mm
Installation featuresTHROUGH HOLE MOUNT
Open circuit output voltage0.25 V
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPHOTOVOLTAIC CELL FOR INFRARED DETECTION
peak wavelength925 nm
Semiconductor materialSILICON
surface mountNO
Base Number Matches1
VTS Process Photodiodes
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon
photodiodes is characterized for use in the
photovoltaic (unbiased) mode. Their excellent speed
and broadband sensitivity makes them ideal for
detecting light from a variety of sources such as
LEDs, IREDs, flashtubes, incandescent lamps,
lasers, etc. Improved shunt resistance minimizes
amplifier offset and drift in high gain systems. The
solderable contact system on these photodiodes
provides a cost effective design solution for many
applications.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40°C to 150°C
-40°C to 105°C
Operating Temperature:
-40°C to 125°C
-40°C to 105°C
Reverse Voltage:
Series 20, 31
Series 30
Series 20, 31
Series 30
6.0 Volts
DIMENSIONS
L
W
ACTIVE AREA
VTS__81, 83, 84
PACKAGE DIMENSIONS
inch (mm)
CASE 44C
ANODE (ACTIVE) SURFACE SHOWN
CATHODE IS BACKSIDE
VTS__81
.800 (20.32)
.400 (10.16)
.290
2
(187
2
)
VTS__83
.800 (20.32)
.200 (5.08)
.132
2
(85
2
)
VTS__84
.400 (10.16)
.200 (5.08)
.065
2
(42
2
)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTS curves, page 67)
SYMBOL
I
SC
TC I
SC
I
D
TC I
D
R
SH
C
J
S
R
Re
TC V
OC
t
R
/t
F
V
OC
TC V
OC
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Dark Current
ID Temp. Coefficient
Shunt Resistance
Junction Capacitance
Sensitivity
Responsivity
Sensitivity @ Peak
Response Time @ 1 kΩ Load
Open Circuit Voltage
V
OC
Temperature Coefficient
TEST CONDITIONS
Min.
VTS__81
Typ.
Max.
Min.
VTS__83
Typ.
Max.
Min.
VTS__84
Typ.
Max.
UNITS
mA
%/°C
100
nA
%/°C
MΩ
nF
A/W
A/(W/cm
2
)
A/W
µsec
Volts
mV/°C
H = 1000 lux, 2850 K
H = 1000 Lux, 2850 K
H = 0, VR = 100 mV
H = 0, VR = 100 mV
H = 0, VR = 10 mV
H = 0, V = 0 V, 1 MHz
@ 400 nm
400 nm, 0.18 A/W
925 nm
VR = 1 V, 830 nm
H = 1000 Lux, 2850 K
H = 1000 Lux, 2850 K
1.10
1.50
0.20
100
+11
0.6
3.5
500
0.5
0.64
.20
50
+11
1.2
1.75
200
0.25
0.33
.20
40
+11
1.5
1.0
.18
0.20
0.34
0.60
6.4
0.18
0.20
0.15
0.60
3.4
0.18
0.20
0.07
0.60
1.8
0.25
0.45
-2.6
0.25
0.45
-2.6
0.25
0.45
-2.6
Excelitas Technologies, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.excelitas.com
69

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Description Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V, Photovoltaic Cell For Infrared Detection, 0.25V,
Maker Excelitas Excelitas Excelitas Excelitas Excelitas Excelitas Excelitas Excelitas Excelitas
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
Effective area 85 sq mm 42 sq mm 42 sq mm 187 sq mm 187 sq mm 187 sq mm 85 sq mm 85 sq mm 42 sq mm
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Open circuit output voltage 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V
Maximum operating temperature 105 °C 125 °C 105 °C 125 °C 125 °C 105 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Optoelectronic device types PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION PHOTOVOLTAIC CELL FOR INFRARED DETECTION
peak wavelength 925 nm 925 nm 925 nm 925 nm 925 nm 925 nm 925 nm 925 nm 925 nm
Semiconductor material SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
surface mount NO NO NO NO NO NO NO NO NO
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