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BAV70W

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size130KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
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BAV70W Overview

Rectifier Diode,

BAV70W Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BL
Galaxy Electrical
Dual surface mount switching diode
FEATURES
Fast switching speed.
High conductance.
Common cathode.
For general purpose switching appilications.
Surface mount package ideally suited
for automatic insertion.
Production specification
BAV70W
Pb
Lead-free
SOT-323
APPLICATIONS
Small signal switching
ORDERING INFORMATION
Type No.
BAV70W
Marking
KJA
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Diode reverse voltage
Forward continuous Current
Forward Surge Current
Power Dissipation
Junction temperature
Storage temperature range
t=1μS
Symbol
V
RM
V
R
I
F
I
FS
P
d
T
j
T
stg
Limits
70
70
200
4.5
250
150
-65-+150
Unit
V
V
mA
A
mW
Document number: BL/SSSDF008
Rev.A
www.galaxycn.com
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